SM6032NSG SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching N-Channel MOSFET
  • 60V/260Aa, RDS(ON)= 2.4mΩ (max.) @ VGS= 10V
  • 100% UIS+Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) G S D Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Top View of TO-263-2 G D S SM6032NS Handling Code Temperature Range Package Code Package Code G : TO-263-2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM6032NS G : SM6032N XXXXX XXXXX - Lot Code Assembly Material

www.sinopowersemi.com2Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±25 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 120 A ID Continuous Drain Current TC=25°C 260 a Continuous Drain Current TC=100°C 165 a IDM Pulsed Drain Current TC=25°C 400 b PD Maximum Power Dissipation TC=25°C 312 W TC=100°C 125 RθJC Thermal Resistance-Junction to Case Steady State 0.4 °C/W ID Continuous Drain Current TA=25°C 23 A TA=70°C 18 PD Maximum Power Dissipation TA=25°C 2.5 W TA=70°C 1.6 RθJA Thermal Resistance-Junction to Ambient Steady State 50 °C/W IAS c Avalanche Current, Single pulse L=0.5mH 65 A EAS c Avalanche Energy, Single pulse L=0.5mH 1056 mJ Note *: Surface Mounted on 1in 2 pad area. Note a: Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. Note b: Pulse width limited by max. junction temperature. Note c: UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V - - 1 µA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) d Drain-Source On-state Resistance VGS=10V, IDS=40A - 1.9 2.4 mΩ Diode Characteristics VSD d Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time IDS=40A, dlSD/dt=100A/µs - 65 - ns Qrr Reverse Recovery Charge - 117 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F= 1MHz - 1 - Ω Ciss Input Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 9000 11700 pF Coss Output Capacitance - 1525 - Crss Reverse Transfer Capacitance - 710 - td(ON) Turn-on Delay Time VDD=30V, RL=30Ω , IDS=1A, VGEN=10V, RG=6Ω - 40 72 ns Tr Turn-on Rise Time - 20 36 td(OFF) Turn-off Delay Time - 102 184 Tf Turn-off Fall Time - 82 148 Gate Charge Characteristics e Qg Total Gate Charge VDS=30V, VGS=10V, IDS=40A - 172 240 nC Qgs Gate-Source Charge - 40 - Qgd Gate-Drain Charge - 55 - Note d: Pulse test ; pulse width ≤300µs, duty cycle≤2%. Note e: Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 100 150 200 250 300 350 TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.5 1E-4 1E-3 0.01 0.1 RθJC :0.4 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 100 150 200 250 300 TC=25 o C,VG=10V 0.1 1 10 100 300 100 800 10ms 1ms DC Rds(on) Limit TC=25 o C

www.sinopowersemi.com5Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 100 120 140 160 4.5V 0 30 60 90 120 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS=10V 3 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA

www.sinopowersemi.com6Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 1.9mΩ VGS = 10V IDS = 40A 0.1 100 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 2500 5000 7500 10000 12500 15000 17500 Frequency=1MHz Crss Coss Ciss 0 30 60 90 120 150 1800 VDS=30V IDS=40A

www.sinopowersemi.com7Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG

Package Information

UNIT: mm YM B OL MIN. MAX. 4.83 0.00 1.14 1.78 0.38 0.74 1.14 1.65 0.25 6.00 c D E MILLIMETERS b 0.51 0.99

2.54 BSC

9.65 11.43 6.22

0.100 BSC

MIN. MAX. INCHES 0.190 0.000 0.020 0.039 0.045 0.070 0.015 0.029 0.045 0.065 0.236 0.380 0.450 0.245 4.06 0.160 0.010 0.380 0.066 0.110 L e 1.78 8.38 9.65 1.68 2.79 0.070 0.330 H 14.61 15.88 0.575 0.625 1.78 0.070 9.00 9.00 0.354 0.354 Note : Follow JEDEC TO-263 AB. S A 0 808θ o o o o L VIEW A 0.25 GAUGE PLANE SEATING PLANE b2 e E H D L1 b SEE VIEW A A c 8.5 MIN. 9.0 MIN. 1.6 MIN. 4.0 MIN. 5.08 10.5

www.sinopowersemi.com10Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Application A H T1 C d D W E1 F TO-263-2 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com11Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 SM6032NSG Classification Profile Taping Direction Information TO-263-2 USER DIRECTION OF FEED

www.sinopowersemi.com12Copyright  Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.