SM6020NSF

SM6020NSF SINOPWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

Applications

• High Efficiency Synchronous Rectification in SMPS.
• Uninterruptible Power Supply.
• 63V/80A, RDS(ON)= 4.5mW (Max.) @ VGS=10V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET G S D Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM6020NS F : SM6020N XXXXX XXXXX - Lot Code SM6020NS Handling Code Temperature Range Package Code Assembly Material GDS Top View of TO-220

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 63 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 40 IDP 300μs Pulse Drain Current Tested TC=25°C 300 TC=25°C 80 a ID Continuous Drain Current TC=100°C 80 a A TC=25°C 166 PD Maximum Power Dissipation TC=100°C 66 W RqJC Thermal Resistance-Junction to Case 0.75 RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W EAS b Avalanche Energy, Single Pulsed 450 mJ Note a：Current limited by bond wire. Note b：Starting TJ=25°C, L=1mH, I AS=30A, VDD=50V, V GS=10V Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 63 - - V VDS=48V, VGS =0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) c Drain-Source On-state Resistance V GS=10V, IDS=40A - 3.7 4.5 mW Diode Characteristics VSD c Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 42 - ns Qrr Reverse Recovery Charge IDS=40A, dlSD/dt=100A/ms - 62 - nC

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1 - W Ciss Input Capacitance - 4450 5800 Coss Output Capacitance - 675 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 310 - pF td(ON) Turn-on Delay Time - 23 42 tr Turn-on Rise Time - 35 63 td(OFF) Turn-off Delay Time - 58 105 tf Turn-off Fall Time VDD=30V, RL=30W, IDS =1A, VGEN=10V, RG=6W - 36 65 ns Gate Charge Characteristics d Qg Total Gate Charge - 84 110 Qgs Gate-Source Charge - 23 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS =40A - 23 - nC Note c：Pulse test ; pulse width £300ms, duty cycle£2%. Note d：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 120 160 200 TC=25 o C 0 20 40 60 80 100120140160 100 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 100 800 1ms 10ms 100ms DC Rds(on) Limit TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on minimum pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 0 1 2 3 4 5 100 120 140 160 180 200 5.5V 4.5V VGS=6,7,8,9,10V 0 40 80 120 160 200 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS=10V 3 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 3.7mW VGS = 10V IDS = 40A 0.1 100 200 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 1000 2000 3000 4000 5000 6000 7000 Frequency=1MHz Crss Coss Ciss 0 15 30 45 60 75 90 VDS= 30V IDS= 40A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014

Package Information

L e P Q D A c b E/2 E SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3558.38 9.02 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 RECOMMENDED LAND PATTERN UNIT: mm 2.54 R0.52 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Classification Profile

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.