SM6019NSFC-TUG

SM6019NSF SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

• 60V/60A, RDS(ON)=11.5mW (max.) @ VGS=10V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• Synchronous Rectification.
• Power Management in Inverter Systems. N-Channel MOSFET G S D Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM6019NS Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM6019NS F : SM6019N XXXXX XXXXX - Lot Code Assembly Material Top View of TO-220 GDS

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 175 TSTG Storage Temperature Range -55 to 175 IS Diode Continuous Forward Current TC=25°C 60 A IDP 300μs Pulse Drain Current Tested TC=25°C 240 A TC=25°C 60 ID Continuous Drain Current TC=100°C 43 A TC=25°C 83 PD Maximum Power Dissipation TC=100°C 41 W RqJC Thermal Resistance-Junction to Case 1.8 RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W EAS Avalanche Energy, Single Pulsed L=1mH 200 mJ Electrical Characteristics (TA = 25°C Unless Otherwise Noted) SM6019NSF Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 60 - - V VDS=48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=30A - 9.5 11.5 mW Diode Characteristics VSD a Diode Forward Voltage ISD=30A, VGS=0V - 0.85 1.3 V trr Reverse Recovery Time - 45 - ns Qrr Reverse Recovery Charge ISD=30A, dlSD/dt=100A/ms - 60 - nC

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) SM6019NSF Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2 - W Ciss Input Capacitance - 2400 - Coss Output Capacitance - 245 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 140 - pF td(ON) Turn-on Delay Time - 20 30 tr Turn-on Rise Time - 18 33 td(OFF) Turn-off Delay Time - 50 90 tf Turn-off Fall Time VDD=30V, RL=30W, IDS=1A, VGEN=10V, RG=6W - 25 45 ns Gate Charge Characteristics b Qg Total Gate Charge - 45 63 Qgs Gate-Source Charge - 15 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=30A - 15 - nC Note a : Pulse test ; pulse width £300ms, duty cycle £2%. Note b : Guaranteed by design, not subject to production testing.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80100120140160180 100 TC=25 o C 0 20 40 60 80100120140160180 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 1000 300ms 1ms 10ms 100ms DC Rds(on) Limit TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on minimum pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mW) Gate-Source On Resistance 0 1 2 3 4 5 100 120 140 160 6.5V VGS=9,10V 0 40 80 120 160 VGS=10V 5 6 7 8 9 10 IDS=30A -50-25 0 25 50 75100125150175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) 0.1 100 200 Tj=175 o C Tj=25 o C 0 8 16 24 32 40 500 1000 1500 2000 2500 3000 3500 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 45 VDS= 30V IDS= 30A -50-25 0 25 50 75100125150175 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 9.5mW VGS = 10V IDS = 30A

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com

Package Information

UNIT: mm 2.54 R0.52 L e P Q D H1D1 b E/2 E A c SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3558.38 9.02 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 www.sinopowersemi.com Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.