SM6018NSKP SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • 60V/24A, RDS(ON) = 40mW (max.) @ VGS = 10V RDS(ON )= 50mW (max.) @ VGS = 5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • DC to DC Converter
  • Load Switching N-Channel MOSFET Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S S S G D D D D G D SSS DDD ( 1, 2, 3 ) (5,6,7,8) (4) SM6018NS Handling Code Temperature Range Package Code Package Code KP : DFN5x6-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM6018NS KP : SM6018 XXXXX XXXXX - Lot Code Assembly Material DFN5x6-8 Pin 1

www.sinopowersemi.com2 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 12 TC=25°C 96 IDP 300μs Pulse Drain Current Tested TC=100°C 60 TC=25°C 24 ID Continuous Drain Current TC=100°C 15 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W RqJC Thermal Resistance-Junction to Case 2.5 RqJA Thermal Resistance-Junction to Ambient 50 °C/W EAS Drain-Source Avalanche Energy, L=0.5mH 22 mJ Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS =250mA 60 - - V VDS=48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=125°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1 2 3 V IGSS Gate Leakage Current VGS=±16V, VDS=0V - - ±10 mA VGS=10V, IDS=12A - 32 40 RDS(ON) a Drain-Source On-state Resistance VGS=5V, IDS =11A - - 50 mW Diode Characteristics VSD a Diode Forward Voltage ISD=12A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 30 - ns Qrr Reverse Recovery Charge IDS=12A, dlSD/dt=100A/ms - 35 - nC

www.sinopowersemi.com3 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b Ciss Input Capacitance - 530 - Coss Output Capacitance - 85 - Crss Reverse Transfer Capacitance VGS=0V, VDS =30V, Frequency=1.0MHz - 40 - pF td(ON) Turn-on Delay Time - 8 15 Tr Turn-on Rise Time - 8 15 td(OFF) Turn-off Delay Time - 28 51 Tf Turn-off Fall Time VDD=30V, RL=30W, IDS=1A, VGEN =10V, RG=6W - 22 41 ns Gate Charge Characteristics b Qg Total Gate Charge - 12 17 Qgs Gate-Source Charge - 3 - Qgd Gate-Drain Charge VDS =30V, VGS =10V, IDS=12A - 3 - nC Note a : Pulse test ; pulse width £300ms, duty cycle £2%. Note b : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Typical Operating Characteristics Power Dissipation Drain Current Tj - Junction Temperature ( o C) Tj - Junction Temperature ( o Ptot - Power (W) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Effective Transient ID - Drain Current (A) 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RqJA :50 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 500 300us 1ms 10ms 100ms DC Rds(on) Limit TC=25 o C

www.sinopowersemi.com5 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) ID - Drain Current (A) ID - Drain Current (A) RDS(ON) - On Resistance (m W)Normalized Threshold Voltage RDS(ON) - On Resistance (m W) Gate-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature ( o 3.5V 0 5 10 15 20 25 30 VGS=5V VGS=10V 2 3 4 5 6 7 8 9 10 100 IDS=12A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com6 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Tj - Junction Temperature ( o IS - Source Current (A) Normalized On ResistanceC - Capacitance (pF) VGS - Gate-Source Voltage (V) 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 35 40 160 240 320 400 480 560 640 720 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 VDS= 30V IDS= 12A -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 32mW VGS = 10V IDS = 12A

www.sinopowersemi.com7 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013

Package Information

C A D E RECOMMENDED LAND PATTERN UNIT: mm Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. SYMBOL MIN. MAX. 1.20 0.3 4.80 5.30 5.90 6.20 5.50 5.80 0.05 3.34 3.9 A B D E e F G H MILLIMETERS C 0.19 0.25

1.27 BSC

0.35 0.75 MIN. MAX. INCHES 0.047 0.012

0.050 BSC

0.007 0.010 0.189 0.209 0.232 0.244 0.217 0.228 0.002 0.014 0.030 0.131 0.154 0.90 0.035 0.51 0.020 0.30 0.012 K 0.762 0.03 0.05 0.30 0.002 0.012 0.0300.0140.750.35 D1 4.00 4.40 0.157 0.173 H F1F K G 4.6 0.77 6.1 3.6 1.270.5 0.71 1.18 1.16 0.61

www.sinopowersemi.com9 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Carrier Tape & Reel Dimensions A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 H A d Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 DFN5x6-8 (mm)

www.sinopowersemi.com10 SM6018NSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Classification Profile Taping Direction Information USER DIRECTION OF FEED DFN5x6-8

Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.