SM6012NSUB SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • 60V/41A, RDS(ON) = 19.5mΩ (max.) @ VGS = 10V RDS(ON )= 23.5mΩ (max.) @ VGS = 4.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • 100% UIS + Rg Tested
  • DC-DC Converter.
  • Motor Control.
  • Power Tools.
  • Load Switching. N-Channel MOSFET Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D Top View of TO-251 S D G SM6012NS Handling Code Temperature Range Package Code Package Code UB : TO-251 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM6012NS UB: SM6012N XXXXX XXXXX - Lot Code Assembly Material

www.sinopowersemi.com2 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 20 A TC=25°C 41 ID Continuous Drain Current TC=100°C 25 IDM a Pulsed Drain Current TC=25°C 164 A TC=25°C 59.5 PD Maximum Power Dissipation TC=100°C 23 W RθJC Thermal Resistance-Junction to Case 2.1 °C/W TA=25°C 8.5 ID Continuous Drain Current TA=70°C 6.5 A TA=25°C 2.5 PD Maximum Power Dissipation TA=70°C 1.6 W RθJA c Thermal Resistance-Junction to Ambient 50 °C/W IAS b Avalanche Current, Single pulse L=0.5mH 15 A EAS b Avalanche Energy, Single pulse L=0.5mH 56 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25 oC). Note c：Surface Mounted on 1in 2 pad area. Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V VDS=48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 2 3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=16A - 16 19.5 mΩ RDS(ON) d Drain-Source On-state Resistance VGS=4.5V, IDS=14A - 18 23.5 mΩ Diode Characteristics VSD d Diode Forward Voltage ISD=16A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 23 - ns Qrr Reverse Recovery Charge ISD=16A, dlSD/dt=100A/µs - 25 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.5 - Ω Ciss Input Capacitance - 1370 1780 Coss Output Capacitance - 135 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 60 - pF td(ON) Turn-on Delay Time - 14 26 tr Turn-on Rise Time - 8 15 td(OFF) Turn-off Delay Time - 38 69 tf Turn-off Fall Time VDD=30V, RL=30Ω , IDS=1A, VGEN=10V, RG=6Ω - 12 22 ns Gate Charge Characteristics e Qg Total Gate Charge VDS=30V, VGS=4.5V, IDS=16A - 12 - Qg Total Gate Charge - 26 37 Qgs Gate-Source Charge - 5 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=16A - 5 - nC Note d：Pulse test ; pulse width ≤300µs, duty cycle ≤2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Typical Operating Characteristics Power Dissipation Drain Current Tj - Junction Temperature ( o C) Tj - Junction Temperature ( o Ptot - Power (W) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Effective Transient ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 800 10µs 10ms 100µs 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RθJC :2.1 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) ID - Drain Current (A) ID - Drain Current (A) RDS(ON) - On Resistance (m Ω )Normalized Threshold Voltage RDS(ON) - On Resistance (m Ω ) Gate-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature ( o 0 1 2 3 4 5 6 3.5V 2.5V 0 10 20 30 40 50 60 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=16A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA

www.sinopowersemi.com6 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Tj - Junction Temperature ( o IS - Source Current (A) Normalized On ResistanceC - Capacitance (pF) VGS - Gate-Source Voltage (V) -50 -25 0 25 50 75 100125150 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RON@Tj=25 o C: 16mΩ VGS = 10V IDS = 16A 0.1 100 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 200 400 600 800 1000 1200 1400 1600 1800 2000 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 24 280 VDS=30V IDS=16A

www.sinopowersemi.com7 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9 SM6012NSUB Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 Classification Profile

Copyright  Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.