SM6012NSKC-TRG

SM6012NSK SINOPWER | Alldatasheet

Document overview

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• PDF pages: 11

Technical content

Features

Applications

• 60V/10A, RDS(ON) = 20mW (max.) @ VGS = 10V RDS(ON )= 24mW (max.) @ VGS = 4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• SMPS Synchronous Rectification.
• DC-DC Conversion.
• Load Switch. N-Channel MOSFET Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S S S G D D D D Top View of SOP-8 G S D D S S D D ( 5,6,7,8 ) (4) (1, 2, 3) SM6012NS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM6012NS K : XXXXX - Lot Code Assembly Material 6012 XXXXX

www.sinopowersemi.com2 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 5 TA=25°C 10 ID Continuous Drain Current TA=70°C 8 IDM a Pulsed Drain Current TA=25°C 38 A TA=25°C 3.5 PD Maximum Power Dissipation TA=70°C 2.2 W t £ 10s 35 RqJA c Thermal Resistance-Junction to Ambient Steady State 70 °C/W IAS b Avalanche Current, Single pulse L=0.1mH 27 A EAS b Avalanche Energy, Single pulse L=0.1mH 36 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25 oC). Note c：Surface Mounted on 1in 2 pad area. Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 60 - - V VDS=48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS =250mA 1 2 3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=10A - 17 20 RDS(ON) d Drain-Source On-state Resistance VGS=4.5V, IDS=9A - 18 24 mW Diode Characteristics VSD d Diode Forward Voltage ISD=10A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 21 - ns Qrr Reverse Recovery Charge ISD=10A, dlSD/dt=100A/ms - 22 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.5 - W Ciss Input Capacitance - 1370 1780 Coss Output Capacitance - 135 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 60 - pF td(ON) Turn-on Delay Time - 14 26 tr Turn-on Rise Time - 8 15 td(OFF) Turn-off Delay Time - 38 69 tf Turn-off Fall Time VDD=30V, RL=30W, IDS=1A, VGEN =10V, RG=6W - 12 22 ns Gate Charge Characteristics e Qg Total Gate Charge VDS=30V, VGS=4.5V, IDS=10A - 12 - Qg Total Gate Charge - 26 37 Qgs Gate-Source Charge - 5 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=10A - 5 - nC Note d：Pulse test ; pulse width £300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Typical Operating Characteristics Power Dissipation Drain Current Tj - Junction Temperature ( o C) Tj - Junction Temperature ( o Ptot - Power (W) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Effective Transient ID - Drain Current (A) 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 1030 1E-3 0.01 0.1 Mounted on 1in pad RqJA :35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100300 0.01 0.1 100 300ms 1ms 10ms 100ms DC Rds(on) Limit TA=25 o C

www.sinopowersemi.com5 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) ID - Drain Current (A) ID - Drain Current (A) RDS(ON) - On Resistance (m W)Normalized Threshold Voltage RDS(ON) - On Resistance (m W) Gate-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature ( o 2.5V 0 8 16 24 32 40 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=10A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com6 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Tj - Junction Temperature ( o IS - Source Current (A) Normalized On ResistanceC - Capacitance (pF) VGS - Gate-Source Voltage (V) -50 -25 0 25 50 75 100125150 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RON@Tj=25 o C: 17mW VGS = 10V IDS = 10A 0.1 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 200 400 600 800 1000 1200 1400 1600 1800 2000 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 24 280 VDS=30V IDS=10A

www.sinopowersemi.com7 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014

Package Information

UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - - SOP-8

www.sinopowersemi.com9 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm)

www.sinopowersemi.com10 SM6012NSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 Classification Profile Taping Direction Information USER DIRECTION OF FEED SOP-8

Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.