SM6009NSF SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • High Efficiency Synchronous Rectification in SMPS.
  • Uninterruptible Power Supply.
  • High Speed Power Switching. N-Channel MOSFET
  • 60V/160Aa, RDS(ON)= 3.6mΩ (max.) @ VGS= 10V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) G S D Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). GDS Top View of TO-220 Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM6009NS F : SM6009NS XXXXX XXXXX - Lot Code SM6009NS Handling Code Temperature Range Package Code Assembly Material

www.sinopowersemi.com2Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 80 TC=25°C 160 a ID Continuous Drain Current TC=100°C 102 IDM b Pulsed Drain Current TC=25°C 400 A TC=25°C 192 PD Maximum Power Dissipation TC=100°C 77 W RθJC Thermal Resistance-Junction to Case Steady State 0.65 °C/W TA=25°C 16 ID Continuous Drain Current TA=70°C 13 A TA=25°C 2 PD Maximum Power Dissipation TA=70°C 1.25 W RθJA Thermal Resistance-Junction to Ambient Steady State 62.5 °C/W IAS c Avalanche Current, Single pulse L=0.5mH 48 A EAS c Avalanche Energy, Single pulse L=0.5mH 576 mJ Note a：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V VDS=48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS =250µA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) d Drain-Source On-state Resistance V GS=10V, IDS=40A - 3.0 3.6 mΩ Diode Characteristics VSD d Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 38 - ns Qrr Reverse Recovery Charge ISD=40A, dlSD/dt=100A/µs - 50 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 1 - Ω Ciss Input Capacitance - 6000 7800 Coss Output Capacitance - 920 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 435 - pF td(ON) Turn-on Delay Time - 30 54 tr Turn-on Rise Time - 23 42 td(OFF) Turn-off Delay Time - 90 162 tf Turn-off Fall Time VDD=30V, RL=30Ω , IDS=1A, VGEN =10V, RG=6Ω - 83 150 ns Gate Charge Characteristics e Qg Total Gate Charge - 115 160 Qgs Gate-Source Charge - 35 - Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=40A - 30 - nC Note d：Pulse test ; pulse width ≤300µs, duty cycle ≤2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 120 150 180 210 TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.6 1E-5 1E-4 1E-3 0.01 0.1 RθJC :0.65 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 120 150 180 TC=25 o C,VG=10V 0.1 1 10 100 300 0.1 100 1000 100ms 10ms 1ms DC Rds(on) Limit TC=25 o C

www.sinopowersemi.com5Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 120 150 180 210 4.5V 5.5V VGS=6,7,8,9,10V 0 40 80 120 160 200 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS=10V 3 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250µA

www.sinopowersemi.com6Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 3mΩ VGS = 10V IDS = 40A 0.1 100 200 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 1500 3000 4500 6000 7500 9000 10500 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 1200 VDS=30V IDS=40A

www.sinopowersemi.com7Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF

Package Information

L e P Q D A c b E/2 E SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3558.38 9.02 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 RECOMMENDED LAND PATTERN UNIT: mm 2.54 R0.52 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

www.sinopowersemi.com9Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Classification Profile

www.sinopowersemi.com10Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 SM6009NSF Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com11Copyright  Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.