SM3322NHQA SINOPWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

Applications

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
  • 30V/70A, RDS(ON)= 4.2mW (Max.) @ VGS=10V RDS(ON)= 6.5mW (Max.) @ VGS=4.5V
  • Reliable and Rugged
  • Lower Qg and Qgd for high-speed switching
  • Lower RDS(ON) to Minimize Conduction Losses
  • 100% UIS + Rg Tested
  • Lead Free and Green Devices Available (RoHS Compliant) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). N-Channel MOSFET G D SSS DDD ( 1, 2, 3 ) (5,6,7,8) (4) SM3322NH Handling Code Temperature Range Package Code Package Code QA : DFN3x3A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3322NH QA : SM 3322N XXXXX - Lot Code Assembly Material XXXXX S SS G D D D D DFN3x3A-8_EP

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 18 TC=25°C 70* ID a Continuous Drain Current TC=100°C 46 IDM b Pulsed Drain Current TC=25°C 140 A TC=25°C 31.3 PD Maximum Power Dissipation TC=100°C 12.5 W RqJC Thermal Resistance-Junction to Case Steady State 4 °C/W TA=25°C 18 ID c Continuous Drain Current TA=70°C 14 A TA=25°C 2.08 PD c Maximum Power Dissipation TA=70°C 1.3 W t £ 10s 40 RqJA c Thermal Resistance-Junction to Ambient Steady State 60 °C/W IAS d Avalanche Current, Single pulse L=0.1mH 28 A EAS d Avalanche Energy, Single pulse L=0.1mH 39 mJ Note a,*：Max. continue current is limited by bonding wire. Note b：Pulse width is limited by max. junction temperature. Note c：RqJA steady state t=100s. Note d：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature T j=25 o C). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V BVDSSt Drain-Source Breakdown Voltage (transient) VGS=0V, ID(aval)=28A Tcase=25°C, ttransient=100ns 34 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=12A - 3.3 4.2 mW TJ=125°C - 5 - VGS=4.5V, IDS=9A - 5 6.5 Gfs Forward Transconductance VDS=10V, IDS=5A - 18 - S Diode Characteristics VSD e Diode Forward Voltage ISD=10A, VGS=0V - 0.77 1.1 V trr Reverse Recovery Time ISD=5A, dlSD/dt=100A/ms - 34 - ns ta Charge Time - 18 - tb Discharge Time - 16 - Qrr Reverse Recovery Charge - 22 - nC Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1 2 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 1350 - pF Coss Output Capacitance - 900 - Crss Reverse Transfer Capacitance - 65 - td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 13 - ns tr Turn-on Rise Time - 7.6 - td(OFF) Turn-off Delay Time - 26 - tf Turn-off Fall Time - 35 - Gate Charge Characteristics Qg Total Gate Charge VDS=15V, VGS=10V, IDS=15A - 19 30 nC Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=12A - 8.8 - Qgth Threshold Gate Charge - 2.3 - Qgs Gate-Source Charge - 4.8 - Qgd Gate-Drain Charge - 2 - Note e：Pulse test ; pulse width £300ms, duty cycle£2%. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC : 4 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Typical Operating Characteristics (Cont.) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 1E-41E-30.01 0.1 1 10 100500 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 60 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 100 120 140 4.5V 3.5V VGS=5,6,7,8,9,10V 0 20 40 60 80 100 120 140 VGS=10V VGS=4.5V 0.01 0.1 1 10 100 0.01 0.1 100 400 300ms Rds(on) Limit 1sTA=25 O C 10ms 1ms 100ms DC

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Typical Operating Characteristics (Cont.) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) 2 3 4 5 6 7 8 9 10 IDS=12A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 3.3mW VGS = 10V IDS = 12A 0.1 100 Tj=150 o C Tj=25 o C

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) Transfer Characteristics ID - Drain Current (A) VGS - Gate-Source Voltage (V) 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 1600 1800 2000 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 VDS =15V IDS =12A 0 1 2 3 4 5 6 Tj=125 o C Tj=25 o C

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2017 Classification Profile

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.