SM3319NAQA SINOPWER | Alldatasheet

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Ordering and Marking Information N-Channel MOSFET

  • 30V/14A, RDS(ON) = 24mW(max.) @ VGS = 10V RDS(ON) = 35mW(max.) @ VGS = 4.5V
  • Avalanche Rated
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • ESD Protection
  • Lead Free and Green Devices Available (RoHS Compliant) G D SSS DDD ( 1, 2, 3 ) (5,6,7,8) (4) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. SM3319NA Handling Code Temperature Range Package Code Package Code QA : DFN3x3A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3319NA QA : SM 3319N XXXXX - Lot Code Assembly Material XXXXX S SS G D D D D DFN3x3A-8_EP

www.sinopowersemi.com2 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Note a：Package is limited to 14A. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Note c：Steady state = 999sec. Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 1.5 TC=25°C 14 a ID Continuous Drain Current TC=100°C 11.5 A TC=25°C 12.5 PD Maximum Power Dissipation TC=100°C 5 W RqJC Thermal Resistance-Junction to Case Steady State 10 °C/W TA=25°C 7 ID Continuous Drain Current TA=70°C 5.6 IDM Pulsed Drain Current TA=25°C 28 A TA=25°C 1.56 PD Maximum Power Dissipation TA=70°C 1 W t £ 10s 50 RqJA Thermal Resistance-Junction to Ambient Steady State c °C/W IAS b Avalanche Current, Single pulse L=0.1mH 10 A EAS b Avalanche Energy, Single pulse L=0.1mH 5 mJ

www.sinopowersemi.com3 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS =24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS =VGS, IDS=250mA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA VGS=10V, IDS=7A - 20 24 RDS(ON) d Drain-Source On-state Resistance VGS=4.5V, IDS=5A - 26 35 mW Diode Characteristics VSD d Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr e Reverse Recovery Time - 8 - ta Charge Time - 4.5 - tb Discharge Time - 3.7 - ns Qrr e Reverse Recovery Charge ISD=8A, dlSD/dt=100A/ms - 3 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3 - W Ciss Input Capacitance - 330 430 Coss Output Capacitance - 57 - Crss Reverse Transfer Capacitance VGS=0V, VDS =15V, Frequency=1.0MHz - 35 - pF td(ON) Turn-on Delay Time - 7.5 14 tr Turn-on Rise Time - 9.5 18 td(OFF) Turn-off Delay Time - 15 27 tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN =10V, RG=6W - 3.3 6 ns Gate Charge Characteristics e Qg Total Gate Charge VDS =15V, VGS=10V, IDS=5A - 6.8 10 Qg Total Gate Charge - 3.2 5 Qgth Threshold Gate Charge - 0.8 - Qgs Gate-Source Charge - 1.5 - Qgd Gate-Drain Charge VDS =15V, VGS=4.5V, IDS=5A - 1.1 - nC Note d：Pulse test ; pulse width £ 300 ms, duty cycle £ 2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 2.5 5.0 7.5 10.0 12.5 15.0 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 1E-6 1E-5 1E-4 1E-3 0.01 1E-3 0.01 0.1 RqJC :10 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.1 1 10 100 0.1 300ms Rds(on) Limit TC=25 o C 100ms 1ms DC

www.sinopowersemi.com5 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance Typical Operating Characteristics (Cont.) 1E-41E-30.01 0.1 1 10 100 800 0.01 0.1 Mounted on 1in pad RqJA : 80 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 0.0 0.3 0.6 0.9 1.2 1.5 1.8 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit 1sTA=25 o C 10ms 300ms 1ms 100ms DC

www.sinopowersemi.com6 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m W) 3.5V 2.5V VGS=5,6,7,8,9,10V 0 4 8 12 16 20 24 28 VGS=10V VGS=4.5V 2 3 4 5 6 7 8 9 10 IDS=7A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com7 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Typical Operating Characteristics (Cont.) VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 20mW VGS = 10V IDS = 7A 0 5 10 15 20 25 30 100 150 200 250 300 350 400 450 Frequency=1MHz Crss Coss Ciss 0 1 2 3 4 5 6 7 VDS= 15V IDS= 5A 0.1 Tj=150 o C Tj=25 o C

www.sinopowersemi.com8 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10 SM3319NAQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - March, 2017 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.