SM3317NSQA SINOPWER | Alldatasheet

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Ordering and Marking Information N-Channel MOSFET

  • 30V/34A, RDS(ON) =11.5mW(max.) @ VGS =10V RDS(ON) =15.5mW(max.) @ VGS =4.5V
  • Avalanche Rated
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) G D SSS DDD ( 1, 2, 3 ) (5,6,7,8) (4) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM3317NS Handling Code Temperature Range Package Code Package Code QA : DFN3x3A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3317NS QA : SM

3317 XXXXX - Lot Code

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. DFN3x3A-8_EP SSS G D D D D

www.sinopowersemi.com2 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TA=25°C 12 ID a Continuous Drain Current (V GS =10V) TA=70°C 10 IDM a Pulsed Drain Current (V GS =10V) TA=25°C 40 TC =25°C 34 ID c Continuous Drain Current (V GS =10V) TC =70°C 21 IDM c Pulsed Drain Current (V GS =10V) TC =25°C 80 IS a Diode Continuous Forward Current 1 IAS b Avalanche Current, Single pulse L=0.1mH 23 A EAS b Avalanche Energy, Single pulse L=0.1mH 25 mJ TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2.5 PD a Maximum Power Dissipation TA=70°C 1.6 TC =25°C 25 PD c Maximum Power Dissipation TC =70°C 16 W t £ 10s 50 RqJA a Thermal Resistance-Junction to Ambient Steady State 70 RqJC c Thermal Resistance-Junction to Case Steady State 5 °C/W Note a ：Surface Mounted on 1in 2 pad area, t £ 10sec. Note b ：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25 oC). Note c ：The power dissipation P D is based on T J(MAX) = 150 oC, and it is useful for reducing junction-to-case thermal resistance ( RqJC ) when additional heat sink is used.

www.sinopowersemi.com3 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.9 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=20A - 10 11.5 mW VGS=4.5V, IDS=20A - 13 15.5 Diode Characteristics VSD a Diode Forward Voltage ISD=1A, VGS=0V - 0.7 1.1 V trr b Reverse Recovery Time ISD=20A, dlSD/dt=100A/ms - 18.5 - ns Qrr b Reverse Recovery Charge - 10 - nC Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.0 3 4.5 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 630 760 910 pF Coss Output Capacitance 105 130 155 Crss Reverse Transfer Capacitance 54 70 94 td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 8 14 ns tr Turn-on Rise Time - 10 17 td(OFF) Turn-off Delay Time - 23 42 tf Turn-off Fall Time - 5 12 Gate Charge Characteristics b Qg Total Gate Charge VDS=15V, VGS=10V, IDS=20A - 14 17 nC Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=20A - 6.1 8 Qgth Threshold Gate Charge - 1.4 1.9 Qgs Gate-Source Charge - 2.4 2.9 Qgd Gate-Drain Charge - 2.3 3.2 Note a：Pulse test ; pulse width £ 300 ms, duty cycle £ 2%. Note b：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100300 0.01 0.1 100 300 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC

www.sinopowersemi.com5 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 200 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.05 1E-4 1E-3 0.01 0.1 RqJC :5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Operating Characteristics (Cont.)

www.sinopowersemi.com6 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m W) 3.5V 0 8 16 24 32 40 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=20A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com7 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Typical Operating Characteristics (Cont.) VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 10mW VGS = 10V IDS = 20A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 900 1000 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 140 VDS=15V IDS=20A

www.sinopowersemi.com8 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Typical Operating Characteristics (Cont.) Transfer Characteristics ID - Drain Current (A) VGS - Gate-Source Voltage (V) 0 1 2 3 4 5 6 Tj=125 o C Tj=25 o C Tj=-55 o C

www.sinopowersemi.com9 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com10 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com11 SM3317NSQA Copyright ã Sinopower Semiconductor, Inc. Rev. A.12 - February, 2017 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.