SM3315NSQG

SM3315NSQG SINOPWER | Alldatasheet

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Technical content

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Ordering and Marking Information N-Channel MOSFET

• 30V/54A, RDS(ON) = 6.6mW(max.) @ VGS = 10V RDS(ON) = 9.5mW(max.) @ VGS = 4.5V
• Avalanche Rated
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) G D SSS DDD ( 1, 2, 3 ) (5,6,7,8) (4) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S S S G D D D D SM3315NS Handling Code Temperature Range Package Code Package Code QG : DFN3x3D-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3315NS QG : SM

3315 XXXXX - Lot Code

DFN3x3D-8_EP

www.sinopowersemi.com2 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TA=25°C 12 ID a Continuous Drain Current (VGS=10V) TA=70°C 9.5 IDM a Pulsed Drain Current (V GS=10V) TA=25°C 40 TC=25°C 54 ID d Continuous Drain Current (VGS=10V) TC=70°C 42 IDM Pulsed Drain Current (VGS=10V) TC=25°C 180 IS Diode Continuous Forward Current 40 IAS b Avalanche Current, Single pulse L=0.1mH 25 A EAS b Avalanche Energy, Single pulse L=0.1mH 31.25 mJ TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 1.6 PD a Maximum Power Dissipation TA=70°C 1 W TC=25°C 29 PD d Maximum Power Dissipation TC=70°C 19 W t £ 10s 35 RqJA a,c Thermal Resistance-Junction to Ambient Steady State 60 RqJC d Thermal Resistance-Junction to Case Steady State 3.5 °C/W Note a：Surface Mounted on 1in 2 pad area, t £ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Note c：Maximum under Steady State conditions is 75 °C/W. Note d：The power dissipation P D is based on TJ(MAX) = 150 o C, and it is useful for reducing junction-to-case thermal resistance (RqJC) when additional heat sink is used.

www.sinopowersemi.com3 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=12A - 5.5 6.6 mW VGS=4.5V, IDS=9A - 7.3 9.5 Diode Characteristics VSD a Diode Forward Voltage ISD=2A, VGS=0V - 0.8 1.1 V trr b Reverse Recovery Time ISD=12A, dlSD/dt=100A/ms - 10 - ns ta Charge Time - 7 - tb Discharge Time - 2.7 - Qrr b Reverse Recovery Charge - 3 - nC Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3 4.5 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 1360 1700 2040 pF Coss Output Capacitance 185 265 345 Crss Reverse Transfer Capacitance 99 165 231 td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 14 26 ns tr Turn-on Rise Time - 10 19 td(OFF) Turn-off Delay Time - 44 80 tf Turn-off Fall Time - 12 23 Gate Charge Characteristics b Qg Total Gate Charge VDS=15V, VGS=10V, IDS=12A - 28.3 39.6 nC Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=12A - 12.9 18 Qgth Threshold Gate Charge - 2.46 3.44 Qgs Gate-Source Charge - 4.22 5.9 Qgd Gate-Drain Charge - 7.3 10.2 Note a：Pulse test ; pulse width £ 300 ms, duty cycle £ 2%. Note b：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area VDS - Drain - Source Voltage (V) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) ID - Drain Current (A) 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 500 Rds(on) Limit TC=25 o C 10ms 300ms 1ms 100ms DC Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0.01 0.1 1 10 100300 0.01 0.1 100 300 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC

www.sinopowersemi.com5 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance ID - Drain Current (A) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics VGS - Gate - Source Voltage (V) Gate-Source On Resistance RDS(ON) - On Resistance (m W) 2.5V 0 8 16 24 32 40 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=12A Thermal Transient Impedance Square Wave Pulse Duration (sec) 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Normalized Transient Thermal Resistance

www.sinopowersemi.com6 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Typical Operating Characteristics (Cont.) VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward Capacitance -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 5.5mW VGS = 10V IDS = 12A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 300 600 900 1200 1500 1800 2100 2400 Frequency=1MHz Crss Coss Ciss Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA IS - Source Current (A)

www.sinopowersemi.com7 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) 0 5 10 15 20 25 300 VDS=15V IDS=12A Typical Operating Characteristics (Cont.)

www.sinopowersemi.com8 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Disclaimer Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10 SM3315NSQG Copyright ã Sinopower Semiconductor Inc. Rev. A.8 - December, 2018 Classification Profile

Copyright ã Sinopower Semiconductor Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor Inc.