SM3303PSQG SINOPWER | Alldatasheet

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Ordering and Marking Information P-Channel MOSFET

  • -30V/-50A, RDS(ON) =9.5mW(max.) @ VGS =-10V RDS(ON) =16mW(max.) @ VGS =-4.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • 100% UIS + Rg Tested
  • HBM ESD protection level pass 8KV Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. G S D D ( 5,6,7,8 ) (4) (1, 2, 3) DD SS Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. S S SG D D D D SM3303PS Handling Code Temperature Range Package Code Package Code QG : DFN3x3D-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3303PS QG : SM

3303 XXXXX - Lot Code

DFN3x3D-8_EP

www.sinopowersemi.com2 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±25 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C -20 A ID Continuous Drain Current TC=25°C -50 TC=100°C -31 IDM Pulsed Drain Current TC=25°C -200 PD Maximum Power Dissipation TC=25°C 35.7 W TC=100°C 14.3 RqJC Thermal Resistance-Junction to Case Steady State 3.5 °C/W ID Continuous Drain Current TA=25°C -17.1 A TA=70°C -13.7 PD Maximum Power Dissipation TA=25°C 4.2 W TA=70°C 2.7 RqJA Thermal Resistance-Junction to Ambient t £ 10s 30 °C/W Steady State 75 IAS a Avalanche Current, Single pulse L=0.1mH -38 A L=0.5mH -22 EAS a Avalanche Energy, Single pulse L=0.1mH 72 mJ L=0.5mH 121 Note a：UIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature TJ = 25oC).

www.sinopowersemi.com3 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 mA TJ=85°C - - -30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1.3 -1.8 -2.3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA RDS(ON) b Drain-Source On-state Resistance VGS=-10V, IDS=-17.1A - 7.5 9.5 mW VGS=-4.5V, IDS=-10A - 12 16 Diode Characteristics VSD b Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr c Reverse Recovery Time ISD=-17.1A, dlSD/dt=100A/ms - 24 - ns Qrr c Reverse Recovery Charge - 16 - nC Dynamic Characteristics c Rg Gate Resistance VGS=0V, VDS=0V,F=1MHz - 8 - W Ciss Input Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 2110 - pF Coss Output Capacitance - 450 - Crss Reverse Transfer Capacitance - 330 - td(ON) Turn-on Delay Time VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=6W - 12 - ns tr Turn-on Rise Time - 14 - td(OFF) Turn-off Delay Time - 98 - tf Turn-off Fall Time - 60 - Gate Charge Characteristics c Qg Total Gate Charge VDS=-15V, VGS=-10V, IDS=-17.1A - 45 - nC Qgs Gate-Source Charge - 5 - Qgd Gate-Drain Charge - 12.7 - Note b：Pulse test ; pulse width£300ms, duty cycle£2%. Note c：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=-10V 0.01 0.1 1 10 100300 0.1 100 600 100ms 10ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-5 1E-4 1E-3 0.01 0.1 RqJC :3.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Typical Operating Characteristics (Cont.) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance -ID - Drain Current (A) Safe Operation Area -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) 0.01 0.1 1 10 100 0.1 100 300ms Rds(on) Limit TA=25 O C 10ms 1ms 100ms DC 1E-41E-30.01 0.1 1 10 1001000 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 75 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 100 -4.5V -4V -3V -3.5V 0 20 40 60 80 100 VGS=-10V VGS=-4.5V

www.sinopowersemi.com6 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Typical Operating Characteristics (Cont.) Gate-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) 2 3 4 5 6 7 8 9 10 IDS=-17.1A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 7.5mW VGS = -10V IDS = -17.1A 0.1 100 Tj=150 o C Tj=25 o C

www.sinopowersemi.com7 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 -VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) 0 5 10 15 20 25 30 400 800 1200 1600 2000 2400 2800 3200 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 450 VDS=-15V IDS=-17.1A

www.sinopowersemi.com8 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com9 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10 SM3303PSQG Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - July, 2018 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.