SM3201PSQA SINOPWER | Alldatasheet

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Ordering and Marking Information P-Channel MOSFET

  • -30V/-7.9A, RDS(ON) = 27mΩ (max.) @ VGS =-10V RDS(ON) = 42mΩ (max.) @ VGS =-4.5V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. DFN3x2A-8 (4)G (5)S (1, 2, 3, 6, 7,8) DDDD DD SM3201PS Handling Code Temperature Range Package Code Package Code QA : DFN3x2A-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3201PS QA : SM3201 XXXXX - Lot Code Assembly Material XXXXX

www.sinopowersemi.com2 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Electrical Characteristics (TA = 25°C Unless Otherwise Noted) SM3201PSQA Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 - - V VDS=-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1.3 -1.8 -2.3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, IDS=-7.9A - 22 27 RDS(ON) c Drain-Source On-state Resistance VGS=-4.5V, IDS=-4A - 32 42 mΩ Diode Characteristics VSD c Diode Forward Voltage ISD=-2A, VGS=0V - -0.8 -1.1 V trr d Reverse Recovery Time - 19 - ns Qrr d Reverse Recovery Charge ISD=-7.9A, diSD/dt=100A/µs - 9 - nC Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 V TA=25°C -7.9 ID a Continuous Drain Current (VGS=-10V) TA=70°C -6.3 IDM a 300 µs Pulsed Drain Current (VGS=-10V) -34 IS a Diode Continuous Forward Current -2 IAS b Avalanche Current, Single pulse (L=0.3mH) -16 A EAS b Avalanche Energy, Single pulse (L=0.3mH) 38 mJ TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2.5 PD a Maximum Power Dissipation TA=70°C 1.6 W t ≤ 10s 50 RθJA a Thermal Resistance-Junction to Ambient Steady State 90 °C/W Note a：Surface Mounted on 1in2 pad area, t ≤ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 o C).

www.sinopowersemi.com3 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) SM3201PSQA Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics d Rg Gate Resistance VGS=0V, VDS=0V,F=1MHz - 7 - Ω Ciss Input Capacitance - 840 - Coss Output Capacitance - 150 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 110 - pF td(ON) Turn-on Delay Time - 7.5 - tr Turn-on Rise Time - 8 - td(OFF) Turn-off Delay Time - 37 - tf Turn-off Fall Time VDD=-15V, RL=15Ω , IDS=-1A, VGEN=-10V, RG=6Ω - 16 - ns Gate Charge Characteristics d Qg Total Gate Charge - 18 - Qgs Gate-Source Charge - 3 - Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-7.9A - 4 - nC Note c : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note d : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=-10V 0.01 0.1 1 10 100300 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300µs 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 1E-3 0.01 0.1 Mounted on 1in pad RθJA : 50 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Output Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m Ω ) -3V -4V -3.5V -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250µA 0 7 14 21 28 35 VGS=-10V VGS=-4.5V 2 3 4 5 6 7 8 9 10 100 IDS=-7.9A

www.sinopowersemi.com6 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Typical Operating Characteristics (Cont.) -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 Frequency=1MHz Crss Coss Ciss -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 22mΩ VGS = -10V IDS = -7.9A 0 3 6 9 12 15 180 VDS=-15V IDS=-7.9A

www.sinopowersemi.com7 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com8 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9 SM3201PSQA Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - August, 2015 Classification Profile

Copyright  Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.