SM3119NAUC-TRG

SM3119NAU SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

• Power Management in Desktop Computer or DC/DC Converters.
• 30V/50A, RDS(ON)=10.5mW (max.) @ VGS=10V RDS(ON)=14.5mW (max.) @ VGS=4.5V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET Top View of TO-252-2 G S D SM3119NA Handling Code Temperature Range Package Code Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3119NA U : SM3119NA XXXXX XXXXX - Lot Code Assembly Material Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 30 A IDP Pulse Drain Current Tested TC=25°C 120 A TC=100°C 80 ID a Continuous Drain Current TC=25°C 50* A TC=100°C 35 PD Maximum Power Dissipation TC=25°C 50 W TC=100°C 20 RqJC Thermal Resistance-Junction to Case Steady State 2.5 °C/W RqJA Thermal Resistance-Junction to Ambient t £ 10s 20 °C/W Steady State 50 IAS b Avalanche Current, Single pulse L=0.1mH 23 A EAS b Avalanche Energy, Single pulse L=0.1mH 26.45 mJ Note a：* Current limited by bond wire. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V BVDSSt Drain-Source Breakdown Voltage (transient) VGS=0V, ID(aval)=14A Tcase=25°C, ttransient=100ns 34 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.9 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) c Drain-Source On-state Resistance VGS=10V, IDS=30A - 8.5 10.5 mW TJ=125°C - 12.7 - VGS=4.5V, IDS=15A - 12 14.5 Gfs Forward Transconductance VDS=5V, IDS=15A - 40 - S Diode Characteristics VSD c Diode Forward Voltage ISD=30A, VGS=0V - 0.9 1.1 V trr Reverse Recovery Time IDS=30A, dlSD/dt=100A/ms - 20 - ns ta Charge Time - 12 - tb Discharge Time - 8 - Qrr Reverse Recovery Charge - 11 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.0 3 4.5 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 630 760 910 pF Coss Output Capacitance 105 128 155 Crss Reverse Transfer Capacitance 55 72 95 td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 8 16 ns tr Turn-on Rise Time - 10 19 td(OFF) Turn-off Delay Time - 24 43 tf Turn-off Fall Time - 4.6 8.8 Gate Charge Characteristics d Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=30A - 7 9 nC Qg Total Gate Charge VDS=15V, VGS=10V, IDS=30A - 14 17 Qgth Threshold Gate Charge - 1.4 1.9 Qgs Gate-Source Charge - 2.8 3.3 Qgd Gate-Drain Charge - 3 3.5 Note c：Pulse test ; pulse width£300ms, duty cycle£2%. Note d：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 Rds(on) Limit TC=25 O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RqJA :20 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mW) Gate-Source On Resistance 100 3.5V 4.5V VGS= 6,7,8,9,10V 0 20 40 60 80 100 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=30A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 8.5mW VGS = 10V IDS = 30A 0.1 100 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 900 1000 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 VDS= 15V IDS= 30A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - February, 2017 Classification Profile

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.