SM3117NSUC VBSEMI | Alldatasheet

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N-Channel 4 -V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET  100 % R g and UIS Tested

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 Synchronous Rectification  P ower Supplies PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, c Qg (Typ.) 0.0050 at VGS = 10 V 85 120 nC0.0065 at VGS = 4.5 V 70 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surfac e Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless oth erwise noted Parameter Symbol Limit Unit Dr ain-Source Voltage VDS 4 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 85a, c A TC = 70 °C 70 c TA = 25 °C 59b TA = 70 °C 53b Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 80 Single Pulse Avalanche Energy EAS 320 V Continuous Source-Drain Diode Curren t TC = 25 °C IS 110a, c ATA = 25 °C 2.6b Maximum Po wer Dissipation TC = 25 °C PD 312a W TC = 70 °C 200 TA = 25 °C 3.13b TA = 70 °C 2.0b Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb Steady State RthJA 32 40 °C/WMaximum Junction-to-Case S teady State RthJC 0.33 0.4 RoHS COMPLIANT TO-251 SDG Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

Notes: a. P ulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unle ss otherwise noted Parameter Sy mbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 41 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µAVDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V , VGS = 10 V 120 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 30 A 0.0050 0.0064 ΩVGS = 4.5 V, ID = 20 A 0.0065 0.00 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 180 S Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 2380 pFOutput Capacitance Coss 550 Reverse Transfe r Capacitance Crss 250 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 20 A 120 180 nCGate-Source Charge Qgs 40 Gate-Drain Charge Qgd 22 Gate Resistan ce Rg f = 1 MHz 0.85 1.3 Ω Tu r n-On Delay Time td(on) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 20 30 ns Rise Time tr 11 17 Turn-Off Delay T ime td(off) 77 115 Fall Ti me tf 10 15 Tur n-O n Delay Time td(on) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 102 155 Rise Time tr 62 95 Turn-Off Delay T ime td(off) 180 270 Fall Ti me tf 60 90 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 110 A Pulse Diode Forw ard Currenta ISM 200 Body Diode Voltage VSD IS = 20 A 0.8 1.2 V Body Diode Rev erse Recovery Time trr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Rev erse Recovery Charge Qrr 70 105 nC Reverse Reco very Fall Time ta 30 ns Reverse Recover y Rise Time tb 20 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

25 °C, unless otherwise noted Output Characteristics Transcond uctance Capacitance 100 150 200 250 2.5 VDS - Drain-to-Sou rce Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =3 V VGS =4 V 160 240 320 400 0 1 53 04 56 07 59 0 ID - Drain Current (A) - Transconductance (S)gfs TC = 125 °C TC = - 55 °C TC = 25 °C Crss 1000 2000 3000 0 1 02 03 04 0 Ciss VDS - Drain-to-Sou rce Voltage (V) C - Capacitance (pF) Coss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 01234 VGS - G a t e - to - S ource Voltage (V) - Drain Current (A)I D TC = 25 °C TC = - 55 °C TC = 125 °C 0.0000 0.002 0.004 0.006 0.00 0.01 02 0 4 0 6 0 80 100 120 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 0 50 100 150 200 250 ID =2 0A - Gate-to- Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =3 0V VDS =2 0V VDS =1 0V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted On-Resistance vs. Junction T emperature On-Resistance vs. Gate-to-Source Voltage 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS =1 0V ID =3 0A VGS =4 . 5V 0.000 0.002 0.004 0.006 0.008 0.010 0246 8 10 - On-Resistance (Ω)R DS(on) VGS - Gate-to-S ource Voltage (V) TJ = 25 °C TJ = 150 °C Forward Diode Voltage vs. Tem perature Threshold Voltage VSD -S ource-to-Drain Voltage ( - Source Current (A)I S 0.01 0.001 0.1 100 TJ = 25 °CTJ = 150 °C - 1.0 - 0.6 - 0.2 0.2 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) ID =5m A Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 1000 0.1 1 10 100 - Drain Current (A)I D VDS - Drain-to-Sou rce Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified TC = 25 °C Single Pulse BVDSS Limited byR DS(on)* 100 ms, DC 10 ms 1m s 10 µs 100 µs E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

25 °C, unless otherwise noted * The powe r d issipation PD is based on T J(max) = 150 °C, using ju nct ion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 140 210 280 350 0 25 50 75 100 125 150 TJ -J unction to Case (°C) Package Limited ID - Drain Current (A) Power Derating 100 150 200 250 300 350 400 0 25 50 75 100 125 150 T J -J unction to Case (°C) Power (W) Normalized Thermal Tran sient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Squar e WaveP ulse Duration (s) Normalized E ffective Transient Thermal ImpedanceSingle Pulse 0.1 10-3 10-2 110-110-4 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

Note: Dimension L3 is for reference only. b e L3 L1 L D c AE /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 3.89 9.53 0.153 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3117NSUC A ll data sheet.com

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