SM3116NSUC VBSEMI | Alldatasheet

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Technical content

N-Channel 30-V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS Dire c tive 2011/65/EU

APPLICATIONS

 OR-ing  Server D C / D C Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a, e Qg (Typ) 0.0035 at VGS = 10 V 100 95nC0.00 at V GS = 4.5 V 97 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 100a, e A TC = 70 °C 95e TA = 25 °C 35b, c TA = 70 °C 26b, c Pulsed Drain Current IDM 197 Avalanche Current Pulse L = 0.1 mH IAS 39 Single Pulse Avalanche Energy EAS 94.8 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 90a, e ATA = 25 °C 3.13b, c Maximum Power Di ssipation TC = 25 °C PD 250a W TC = 70 °C 175 TA = 25 °C 3.75b, c TA = 70 °C 2.63b, c Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t  10 sec RthJA 32 40 °C/W Maximum Junction-to-Case Steady State RthJC 0.5 0.6 D G S N-Channel MOSFET TO-251 S D G Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 35 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 7.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 90 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 38.8 A 0.0035 VGS = 4.5 V, ID = 37 A 0.00 Forward Transconductancea gfs VDS = 15 V, ID = 38.8 A 160 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3000 pFOutput Capacitance Coss 710 Reverse Transfer Capacitance Crss 170 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 38.8 A 171 257 nCVDS = 15 V, VGS = 4.5 V, ID = 28.8 A 81.5 123 Gate-Source Charge Qgs 34 Gate-Drain Charge Qgd 29 Gate Resistance Rg f = 1 MHz 1.4 2.1  Tur n-On Delay Time td(on) VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 10 V, Rg = 1  18 27 ns Rise Time tr 11 17 Turn-Off Delay Time td(off) 70 105 Fall Time tf 10 15 Tur n-On De lay Time td(on) VDD = 15 V, RL = 0.67  ID  22.5 A, VGEN = 4.5 V, Rg = 1  55 83 Rise Time tr 180 270 Turn-Off Delay Time td(off) 55 83 Fall Time tf 12 18 Drain-Source Body Diod e Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 120 A Pulse Diode Forward Currenta ISM 120 Body Diode Voltage VSD IS = 22 A 0.8 1.2 V Body Diode Reverse Recovery Ti me trr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 52 78 ns Body Diode Reverse Recover y Charge Qrr 70.2 105 nC Reverse Recover y Fall Time ta 27 ns Reverse Recovery Rise Ti me tb 25 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless other wise noted) Output Characteristics Transc onductance Capacitance V GS = 10 V thru 5 V VDS - Drain-to-Source Voltage (V) ) A ( t n e rruC n i a r D - ID V GS = 2 V V GS = 3 V 100 200 300 400 500 600 0 1 02 03 04 05 06 07 0809 0 ) S ( e c n a t cudn o c s n a r T - Gs f ID - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 500 1000 1500 2000 2500 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ) F p ( e c na t i c a p a C - C C iss C oss C rss Transfer Characteristics RDS(on) vs. Drain Current Gate Ch arge 0.0 0.6 1.2 1.8 2.4 3.0 012 34 VGS - Gate-to-Source Voltage (V) ) A ( t n e rruC n i a r D - ID T C = 25 °C T C = - 55 °C T C = 125 °C 0.0010 0.0020 0.00 0.0040 0.0050 0.0060 0.00 0 1 53 04 56 07 59 0 ID - Drain Current (A) RDS(on) e (Ω) c n a t s i s eR - n O – V GS = 10 V V GS = 4.5 V 0 306 09 0 12 0 1 5 0 1 80 )V( e g a t l oV e c ruo S - o t - e t a G - Qg - Total Gate Charge (nC) VGS I D = 38.8 A V DS = 24 V V DS = 15 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise no ted) On-Resistance vs. Junction Temperatur e RDS(on) vs. VGS vs. Temperature 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) V GS = 10 V, ID = 38.8 A R ) n o ( S D istance s e R - n O - ) d e z i l a m r oN( VGS = 4.5 V, ID = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 02468 10 VGS - Gate-to-Source Voltage (V) RDS(on) - e (Ω) c n a t s i se R - n O I D = 38.8 A T A = 125 °C T A = 25 °C Forward Diode Voltage vs. Temperature Thresh old Voltage 0.001 0.01 0.1 100 0 0.2 0 .4 0.6 0.8 1 ) A ( t n e rruC e c ruo S - IS VSD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 )V( e c n a i raV V ) h t ( S G TJ - Temperature (°C) I D = 250 µA Safe Operating Area, Junction-to-A mbient 0.001 0.01 0.1 100 1000 0.1 1 10 100 T A = 25 °C Single Pulse - Drain Current (A)ID dc 10 s 1 s 100 ms 10 ms *Limited by rDS (on) VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) *The power dissipation PD is ba sed on TJ(max) = 175 °C, using junction-to-case th ermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 100 150 200 250 300 0 25 50 75 100 125 150 175 ID ) A ( t n e rruC n i a r D - TC - Case Temperature (°C) Package Limited Power Derating 100 150 200 250 300 0 25 50 75 100 125 150 175 C - Case Temperature (°C) )W( n o i t a pi s s i D r ewo P T Normalized Thermal Transient Impedance , Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

Note: Dimension L3 is for reference only. b e L3 L1 L D c AE /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 8.89 9.53 0.350 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM3116NSUC A ll data sheet.com