SM3114NSU SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

  • Power Management in Desktop Computer or DC/DC Converters.
  • 30V/75A, RDS(ON)=4.2mW (Max.) @ VGS=10V RDS(ON)=6mW (Max.) @ VGS=4.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET Top View of TO-252-3 G S D Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM3114NS Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3114NS U : SM3114N XXXXX XXXXX - Lot Code Assembly Material G S D

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current 20 TC=25°C 120 IDP 300μs Pulse Drain Current Tested TC=100°C 75 TC=25°C 75 ID Continuous Drain Current TC=100°C 47 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W RqJC Thermal Resistance-Junction to Case Steady State 2.5 t £ 10s 20 RqJA Thermal Resistance-Junction to Ambient Steady State 50 °C/W IAS a Avalanche Current, Single pulse (L=0.5mH) 27 A EAS a Drain-Source Avalanche Energy (L=0.5mH) 180 mJ Note a：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS =0V - - ±100 nA VGS=10V, IDS=30A - 3.5 4.2 TJ=125°C - 5.2 - RDS(ON) b Drain-Source On-state Resistance VGS=4.5V, IDS=20A - 4.6 6 mW Gfs Forward Transconductance VDS=5V, IDS=20A - 36 - S

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics VSD b Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.1 V trr Reverse Recovery Time - 19.5 - ta Charge Time - 11 - tb Discharge Time - 8.5 - ns Qrr Reverse Recovery Charge IDS=30A, dlSD/dt=100A/ms - 11 - nC Dynamic Characteristics c RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.5 0.9 1.5 W Ciss Input Capacitance 1680 2100 2520 Coss Output Capacitance 308 440 572 Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 126 210 294 pF td(ON) Turn-on Delay Time - 17 32 tr Turn-on Rise Time - 10 19 td(OFF) Turn-off Delay Time - 44 80 tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN =10V, RG=6W - 16 30 ns Gate Charge Characteristics c Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=30A - 17.5 24.5 Qg Total Gate Charge - 37 52 Qgth Threshold Gate Charge - 4.8 6.7 Qgs Gate-Source Charge - 5 7 Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=30A - 8.5 12 nC Note b : Pulse test ; pulse width £300ms, duty cycle £2%. Note c : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 1ms Rds(on) Limit TC=25 O C 10ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad RqJA :20 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 100 120 2.5V 3.5V VGS=5,6,7,8,9,10V 0 20 40 60 80 100 120 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=30A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 3.5mW VGS = 10V IDS = 30A 0.1 100 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 300 600 900 1200 1500 1800 2100 2400 2700 3000 Frequency=1MHz Crss Coss Ciss 0 8 16 24 32 40 VDS= 15V IDS= 30A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 16.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252-3 0.20 2.50±0.20 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Classification Profile Taping Direction Information TO-252-3 USER DIRECTION OF FEED

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.