SM3106NSU

SM3106NSU SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

• 30V/83A, RDS(ON)= 4.8mW (max.) @ VGS=10V RDS(ON)= 7.5mW (max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• 100% UIS Tested N-Channel MOSFET Top View of TO-252-3
• Power Management in Desktop Computer or DC/DC Converters.
• UPS/Inverter Application.
• Battery Package Charger and Discharger Switch. G S D SM3106NS Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3106NS U : SM3106N XXXXX XXXXX - Lot Code Assembly Material Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D

www.sinopowersemi.com2 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 20 A IDP 300μs Pulse Drain Current Tested TC=25°C 150 A TC=25°C 83 ID Continuous Drain Current TC=100°C 52 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W RqJC Thermal Resistance-Junction to Case 2.5 °C/W RqJA Thermal Resistance-Junction to Ambient 50 °C/W EAS Avalanche Energy, Single Pulsed L=0.5mH 150 mJ Electrical Characteristics (TA=25°C Unless Otherwise Noted) SM3106NSU Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS =250mA 1.3 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=30A - 4 4.8 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=20A - 5.8 7.5 mW Gfs Forward Transconductance VDS=15V, IDS=32A - 100 - S Diode Characteristics VSD a Diode Forward Voltage ISD=30A, VGS=0V - 0.85 1.1 V trr Reverse Recovery Time - 34 - ns Qrr Reverse Recovery Charge IDS=30A, dlSD/dt=100A/ms - 33 - nC

www.sinopowersemi.com3 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Electrical Characteristics (Cont.) (TA=25°C Unless Otherwise Noted) SM3106NSU Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS =0V,F=1MHz - 2 - W Ciss Input Capacitance - 2500 - Coss Output Capacitance - 460 - Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 350 - pF td(ON) Turn-on Delay Time - 15 28 tr Turn-on Rise Time - 15 28 td(OFF) Turn-off Delay Time - 57 90 tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 25 40 ns Gate Charge Characteristics b Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=30A - 22 - Qg Total Gate Charge - 50 70 Qgs Gate-Source Charge - 8 - Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=30A - 14 - nC Note a : Pulse test ; pulse width £300ms, duty cycle £2%. Note b : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Typical Operating Characteristics Power Dissipation Ptot - Power (W) TJ - Junction Temperature ( °C) ID - Drain Current (A) Drain Current TJ - Junction Temperature ( °C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Effective Transient 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 100 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 Rds(on) Limit TC=25 O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad RqJA :50 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (m W) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (m W) TJ - Junction Temperature ( °C) Gate Threshold Voltage Normalized Threshold Voltage Gate-Source On Resistance Typical Operating Characteristics (Cont.) 100 125 150 3.5V 0 30 60 90 120 150 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=30A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com6 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Drain-Source On Resistance Normalized On Resistance TJ- Junction Temperature (°C) VSD - Source-Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS = 10V IDS = 30A RON@Tj=25 o C: 4m W 0.1 100 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 600 1200 1800 2400 3000 3600 4200 Frequency=1MHz Crss Coss Ciss 0 10 20 30 40 50 VDS=15V IDS=30A

www.sinopowersemi.com7 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Typical Operating Characteristics (Cont.) Transfer Characteristics ID - Drain Current (A) VGS - Gate-Source Voltage (V) 0 1 2 3 4 5 6 7 8 120 150 Tj=125 o C Tj=25 o C Tj=-55 o C

www.sinopowersemi.com8 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com10 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Application A H T1 C d D W E1 F -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252-3 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com11 SM3106NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.