SM3054NSUC-TRG

SM3054NSU SINOPWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

Features

Applications

• Power Management in Desktop Computer or DC/DC Converters.
• 30V/24A, RDS(ON)= 32mW (max.) @ VGS=10V RDS(ON)= 42mW (max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET Top View of TO-252 G S D SM3054NS Handling Code Temperature Range Package Code Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3054NS U : SM3054N XXXXX XXXXX - Lot Code Assembly Material Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 10 TC=25°C 24 ID Continuous Drain Current TC=100°C 15 IDM a Pulsed Drain Current TC=25°C 40 A TC=25°C 27.8 PD Maximum Power Dissipation TC=100°C 11.1 W RqJC Thermal Resistance-Junction to Case Steady State 4.5 °C/W TA=25°C 8.1 ID Continuous Drain Current TA=70°C 6.5 A TA=25°C 3.1 PD Maximum Power Dissipation TA=70°C 2.0 W t £ 10s 20 RqJA Thermal Resistance-Junction to Ambient Steady State 40 °C/W IAS b Avalanche Current, Single pulse (L=0.1mH) 12 A EAS b Avalanche Energy, Single pulse (L=0.1mH) 7.2 mJ Note a：Max. current is limited by bonding wire. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS =24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS =VGS, IDS=250mA 1 1.7 2 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=12A - 27 32 TJ=125°C - 38 - RDS(ON) c Drain-Source On-state Resistance VGS=4.5V, IDS=6A - 32.5 42 mW Gfs Forward Transconductance VDS =3V, ID=6A - 12 - S Diode Characteristics VSD c Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time - 4.8 - ta Charge Time - 4 - tb Discharge Time - 8.8 - ns Qrr Reverse Recovery Charge IF=12A, dlSD /dt=100A/ms - 3.15 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1 1.8 3 W Ciss Input Capacitance 337 422 506 Coss Output Capacitance 50 63 76 Crss Reverse Transfer Capacitance VGS=0V, VDS =15V, Frequency=1.0MHz - 37 - pF td(ON) Turn-on Delay Time - 7.6 - tr Turn-on Rise Time - 10.6 - td(OFF) Turn-off Delay Time - 14 - tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=1W - 2.4 - ns Gate Charge Characteristics d Qg Total Gate Charge VDS =15V, VGS=10V, IDS=12A - 8.3 12 Qg Total Gate Charge - 3.8 - Qgth Threshold Gate Charge - 0.76 - Qgs Gate-Source Charge - 1.4 - Qgd Gate-Drain Charge VDS =15V, VGS=4.5V, IDS=12A - 1.55 - nC Note c：Pulse test ; pulse width £300ms, duty cycle £2%. Note d：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC : 4.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 2 3 4 5 6 7 8 9 10 IDS=12A VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Transfer Characteristics VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 0 1 2 3 4 5 3.5V 2.5V VGS=5,6,7,8,9,10V 0 5 10 15 20 25 30 VGS=4.5V VGS=10V -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA RDS(ON) - On - Resistance (mW)

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 27mW VGS = 10V IDS = 12A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 160 240 320 400 480 560 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 VDS= 15V IDS= 12A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252 (mm)

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Taping Direction Information TO-252 USER DIRECTION OF FEED Classification Profile

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.