SM3040CSU4

SM3040CSU4 SINOPWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 16

Technical content

Features

Applications

• Synchronous Rectification.
• Motor Fan Control.
• High Current, High Speed Switchin.
• H-bridge and Inverter. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• N Channel 30V/29A, RDS(ON) = 18.4mΩ (max.) @ VGS = 10V RDS(ON) = 25mΩ (max.) @ VGS = 4.5V
• P Channel -30V/-20A, RDS(ON) = 37.5mΩ (max.) @ VGS =-10V RDS(ON) = 58mΩ (max.) @ VGS =-4.5V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free Available (RoHS Compliant) Top View of TO-252-4 N-Channel MOSFET P-Channel MOSFET (1) (2) (3) (3) (5) (4) SM3040CS Handling Code Temperature Range Package Code Package Code U4 : TO-252-4 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3040CS U4 : SM3040C XXXXX XXXXX - Lot Code Assembly Material

www.sinopowersemi.com2Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Symbol Parameter N Channel P Channel Unit Common Ratings VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage ±20 ±20 V TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current TC=25°C 15 -10 A IDP a Pulse Drain Current Tested VGS=10V(N),VGS=-10V(P) 50 -50 A ID Continuous Drain Current TC=25°C 29 -20 A TC=70°C 24 -17 PD Maximum Power Dissipation TC=25°C 24 24 W TC=70°C 16 16 RθJC Thermal Resistance-Junction to Case Steady State 6.25 6.25 °C/W ID Continuous Drain Current TA=25°C 16.4 -11.5 A TA=70°C 13.7 -9.6 PD Maximum Power Dissipation TA=25°C 7.5 7.5 W TA=70°C 5.25 5.25 RθJA b Thermal Resistance-Junction to Ambient t ≤ 10s 20 20 °C/W Steady State 60 60 IAS c Avalanche Current, Single pulse L=0.5mH 9 -9 A EAS c Avalanche Energy, Single pulse L=0.5mH 20 20 mJ Note a：Pulse width limited by max. junction temperature. Note b：RθJA steady state t=999s. R θJA is measured with the device mounted on 1in , FR-4 board with 2oz. Copper. Note c：UIS tested and pulse width limited by maximum junction temperature 175 oC (initial temperature T j=25oC). Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

www.sinopowersemi.com3Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 N Channel Electrical Characteristics (TA = 25°C unless otherwise noted) N Channel Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V VDS =24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 µA VGS(th) Gate Threshold Voltage VDS =VGS, IDS=250µA 1.3 1.8 2.3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=8A - 14 18.4 RDS(ON) d Drain-Source On-state Resistance VGS=4.5V, IDS=5A - 17 25 mΩ Diode Characteristics VSD d Diode Forward Voltage ISD=1A, VGS =0V - 0.75 1.1 V trr Reverse Recovery Time - 10 - ns Qrr Reverse Recovery Charge IDS=8A, dlSD/dt=100A/µs - 3.5 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.7 3.4 Ω Ciss Input Capacitance - 545 708 Coss Output Capacitance - 95 - Crss Reverse Transfer Capacitance VGS=0V, VDS =15V, Frequency=1.0MHz - 55 - pF td(ON) Turn-on Delay Time - 6 - tr Turn-on Rise Time - 8.6 - td(OFF) Turn-off Delay Time - 16 - tf Turn-off Fall Time VDD=15V, RL=15Ω , IDS=1A, VGEN =10V, RG=6Ω - 3.6 - ns Gate Charge Characteristics e Qg Total Gate Charge VDS =15V, VGS=10V, IDS=8A - 10.8 16 Qg Total Gate Charge - 5.2 7.8 Qgth Threshold Gate Charge - 0.6 - Qgs Gate-Source Charge - 1 - Qgd Gate-Drain Charge VDS =15V, VGS=4.5V, IDS=8A - 2.8 - nC Note d：Pulse test ; pulse width ≤300µs, duty cycle ≤2%. Note e：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 P Channel Electrical Characteristics (TA = 25°C unless otherwise noted) P Channel Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 - - V VDS =-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 µA VGS(th) Gate Threshold Voltage VDS =VGS, IDS=-250µA -1.3 -1.8 -2.3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, IDS=-12A - 29 37.5 RDS(ON) d Drain-Source On-state Resistance VGS=-4.5V, IDS=-5A - 42 58 mΩ Diode Characteristics VSD d Diode Forward Voltage ISD=-1A, VGS=0V - -0.75 -1 V trr Reverse Recovery Time - 11 - ns Qrr Reverse Recovery Charge IDS=-12A, dlSD /dt=100A/µs - 4 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.3 6.6 Ω Ciss Input Capacitance - 580 754 Coss Output Capacitance - 105 - Crss Reverse Transfer Capacitance VGS=0V, VDS =-15V, Frequency=1.0MHz - 72 - pF td(ON) Turn-on Delay Time - 8.7 - tr Turn-on Rise Time - 10 - td(OFF) Turn-off Delay Time - 22 - tf Turn-off Fall Time VDD=-15V, RL=15Ω , IDS=-1A, VGEN=-10V, RG=6Ω - 9 - ns Gate Charge Characteristics e Qg Total Gate Charge - 13 - Qgs Gate-Source Charge - 1 - Qgd Gate-Drain Charge VDS =-15V, VGS=-10V, IDS=-12A - 4 - nC Note d：Pulse test; pulse width ≤300µs, duty cycle ≤2%. Note e：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com5Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 N Channel Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RθJA :20 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80100120140160180 TC=25 o C 0 20 40 60 80100120140160180 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 Rds(on) Limit TC=25 o C 10ms 300µs 1ms 100ms DC

www.sinopowersemi.com6Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage N Channel Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 2.5V 3.5V VGS=5,6,7,8,9,10V 0 10 20 30 40 50 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=8A -50-25 0 25 50 75100125150175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA

www.sinopowersemi.com7Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) N Channel Typical Operating Characteristics (Cont.) 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 160 240 320 400 480 560 640 720 800 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 120 VDS=15V IDS=8A -50-25 0 25 50 75100125150175 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 14mΩ VGS = 10V IDS = 8A

www.sinopowersemi.com8Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 P Channel Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RθJA : 20 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80100120140160180 TC=25 o C 0 20 40 60 80100120140160180 TC=25 o C,VG=-10V 0.01 0.1 1 10 100300 0.1 100 Rds(on) Limit TC=25 o C 10ms 300µs 1ms 100ms DC

www.sinopowersemi.com9Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage P Channel Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 0 10 20 30 40 50 100 VGS=-4.5V VGS=-10V 2 3 4 5 6 7 8 9 10 IDS=-12A 0 1 2 3 4 5 -2.5V -4.5V -3.5V -4V -5V -3V -50-25 0 25 50 75100125150175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS = -250µA

www.sinopowersemi.com10Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) P Channel Typical Operating Characteristics (Cont.) 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 900 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 140 VDS=-15V IDS=-12A -50-25 0 25 50 75100125150175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 29mΩ VGS = -10V IDS = -12A

www.sinopowersemi.com11Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp N Channel P Channel N Channel P Channel EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS)

www.sinopowersemi.com12Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015

Package Information

5.8 6.5 2.4 1.3 0.6 RECOMMENDED LAND PATTERN UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E H A SEE VIEW A b c e SYMBOL MIN. MAX. 2.39 4.32 5.46 0.46 0.61 0.2 5.33 A c D E MILLIMETERS b 0.50 0.71

1.30 BSC

4.57 6.35 6.73 6.22

0.051 BSC

MIN. MAX. INCHES 0.094 0.020 0.028 0.170 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.008 0.035 0.070 0.410 H L e 9.40 1.40 0.46 0.89 1.78 10.41 0.370 0.055 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 0 8 0 8 6.00 6.00 TO-252-4 0.236 0.236 oo o o

www.sinopowersemi.com13Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Carrier Tape & Reel Dimensions A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 H A d Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252-4 (mm)

www.sinopowersemi.com14Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Taping Direction Information Classification Profile TO-252-4 USER DIRECTION OF FEED

www.sinopowersemi.com15Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - February, 2015 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com16Copyright  Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.