SM3024NSU SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • 30V/41A, RDS(ON)=14mW (max.) @ VGS=10V RDS(ON)=20mW (max.) @ VGS=4.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • Power Management in Desktop Computer or DC/DC Converters. N-Channel MOSFET Top View of TO-252-3 G S D SM3024NS Handling Code Temp. Range Package Code Package Code U : TO-252-3 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3024NS U : SM3024N XXXXX XXXXX - Lot Code Assembly Material o Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D

www.sinopowersemi.com2 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 20 TC=25°C 41 ID Continuous Drain Current TC=100°C 26 IDM a Pulsed Drain Current TC=25°C 103 A TC=25°C 35.7 PD Maximum Power Dissipation TC=100°C 14.3 W RqJC Thermal Resistance-Junction to Case Steady State 3.5 °C/W TA=25°C 12.2 ID Continuous Drain Current TA=70°C 9.8 A TA=25°C 3.1 PD Maximum Power Dissipation TA=70°C 2.0 W t £ 10s 17 RqJA Thermal Resistance-Junction to Ambient Steady State 40 °C/W IAS b Avalanche Current, Single pulse (L=0.1mH) 19 A EAS b Avalanche Energy, Single pulse (L=0.1mH) 18 mJ Note a: Pulse width limited by maximum junction temperature. Note b: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1 1.65 2 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=20A - 11.5 14 TJ=125°C - 16.4 - RDS(ON) c Drain-Source On-state Resistance VGS=4.5V, IDS=10A - 14.5 20 mW Gfs Forward Transconductance VDS=5V , ID=15A - 24 - S Diode Characteristics VSD c Diode Forward Voltage ISD=5A, VGS=0V - 0.79 1.1 V trr Reverse Recovery Time - 6 - ta Charge Time - 5 - tb Discharge Time - 11 - ns Qrr Reverse Recovery Charge IF=20A, dlSD/dt=100A/ms - 4.8 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 2.3 3.5 W Ciss Input Capacitance 700 870 1045 Coss Output Capacitance 96 120 145 Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 60 76 91 pF td(ON) Turn-on Delay Time - 12 - tr Turn-on Rise Time - 11.8 - td(OFF) Turn-off Delay Time - 23.2 - tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=1W - 4.4 - ns Gate Charge Characteristics d Qg Total Gate Charge VDS=15V, VGS=10V, IDS=20A - 16 20 Qg Total Gate Charge - 7.2 - Qgth Threshold Gate Charge - 1.48 - Qgs Gate-Source Charge - 3 - Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=20A - 2.7 - nC Note c: Pulse test ; pulse width£300ms, duty cycle£2%. Note d: Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Effective Transient 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 0.1 100 400 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC : 3.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) Gate-Source On Resistance 0 1 2 3 4 5 100 3.5V 2.5V VGS=5,6,7,8,9,10V 0 10 20 30 40 50 60 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=20A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com6 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 11.5mW VGS = 10V IDS = 20A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 200 400 600 800 1000 1200 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 16 VDS= 15V IDS= 20A

www.sinopowersemi.com7 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com9 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 16.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252-3 0.20 2.50±0.20 (mm)

www.sinopowersemi.com10 SM3024NSU Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - March, 2014 Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.