SM3023NSU SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

  • Power Management in Desktop Computer or DC/DC Converters.
  • 30V/49A, RDS(ON)= 11.5mW (max.) @ VGS=10V RDS(ON)= 17mW (max.) @ VGS=4.5V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) N-Channel MOSFET G S D Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM3023NS SM3023NS U : Temperature Range Handling Code Package Code Assembly Material Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3023N XXXXX XXXXX - Lot Code Top View of TO-252-2 G S D

www.sinopowersemi.com2 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 20 A ID Continuous Drain Current TC=25°C 49 TC=100°C 31 IDM a Pulsed Drain Current TC=25°C 100 PD Maximum Power Dissipation TC=25°C 41 W TC=100°C 16 RqJC Thermal Resistance-Junction to Case Steady State 3 °C/W ID Continuous Drain Current TA=25°C 12 A TA=70°C 9.6 PD Maximum Power Dissipation TA=25°C 2.5 W TA=70°C 1.6 RqJA Thermal Resistance-Junction to Ambient t £ 10s 17 °C/W Steady State 50 IAS b Avalanche Current, Single pulse L=0.1mH 20 A EAS b Avalanche Energy, Single pulse L=0.1mH 20 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS =24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS =VGS, IDS=250mA 1.2 1.7 2.25 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=20A - 9.6 11.5 TJ=125°C - 14.4 - RDS(ON) c Drain-Source On-state Resistance VGS=4.5V, IDS=10A - 13 17 mW Gfs Forward Transconductance VDS =7.6 , ID=8A - 28 - S Diode Characteristics VSD c Diode Forward Voltage ISD=15A, VGS=0V - 0.87 1.1 V trr Reverse Recovery Time - 12 - ta Charge Time - 7 - tb Discharge Time - 5 - ns Qrr Reverse Recovery Charge IF=5A, dlSD/dt=100A/ms - 5.4 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.5 0.75 1.5 W Ciss Input Capacitance 880 1090 1300 Coss Output Capacitance 120 142 163 Crss Reverse Transfer Capacitance VGS=0V, VDS =15V, Frequency=1.0MHz 74 93 110 pF td(ON) Turn-on Delay Time - 12 16 tr Turn-on Rise Time - 11.8 16 td(OFF) Turn-off Delay Time - 23.2 30 tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=1W - 4.4 5.7 ns Gate Charge Characteristics d Qg Total Gate Charge VDS =15V, VGS=4.5V, IDS=20A - 8.8 11 Qg Total Gate Charge - 19.5 23 Qgth Threshold Gate Charge - 1.13 1.3 Qgs Gate-Source Charge - 3.8 4.9 Qgd Gate-Drain Charge VDS =15V, VGS=10V, IDS=20A - 3.1 4 nC Note c：Pulse test ; pulse width£300ms, duty cycle £2%. Note d：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Power Dissipation Ptot - Power (W) TJ - Junction Temperature ( °C) Drain Current TJ- Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Typical Operating Characteristics 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC : 3 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.01 0.1 1 10 100 0.1 100 500 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C

www.sinopowersemi.com5 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (m W) Drain-Source On Resistance ID - Drain Current (A) Transfer Characteristics VGS - Gate - Source Voltage (V) TJ - Junction Temperature ( °C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 0 1 2 3 4 5 100 4.5V 2.5V 3.5V VGS=5,6,7,8,9,10V 0 20 40 60 80 100 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=20A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA RDS(ON) - On - Resistance (mW)

www.sinopowersemi.com6 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Drain-Source On Resistance Normalized On Resistance TJ- Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 9.6mW VGS =10V IDS = 20A 0 5 10 15 20 25 30 150 300 450 600 750 900 1050 1200 1350 1500 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 VDS= 15V IDS= 20A 0.1 100 Tj=150 o C Tj=25 o C

www.sinopowersemi.com7 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9 Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2018 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.