SM3020PSUC-TRG

SM3020PSU SINOPWER | Alldatasheet

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Technical content

Features

Applications

• -30V/-43A, RDS(ON)= 18mW(max.) @ VGS= -10V RDS(ON)= 30mW(max.) @ VGS= -4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) P-Channel MOSFET Top View of TO-252-2 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• Power Magagement in Desktop or DC/DC Converters SM3020PS Handling Code Temperature Range Package Code Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3020PS U : SM3020P XXXXX XXXXX - Lot Code Assembly Material G S D G D S

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Electrical Characteristics (TA = 25°C Unless Otherwise Noted) SM3020PSU Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -30 - - V VDS=-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1.5 -2 -2.5 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA VGS=-10V, IDS=-20A - 14 18 RDS(ON) d Drain-Source On-state Resistance VGS=-4.5V, IDS=-5A - 22 30 mW Diode Characteristics VSD d Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr e Reverse Recovery Time - 19 - ns Qrr e Reverse Recovery Charge ISD=-20A, diSD/dt=100A/ms - 10 - nC Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V TA=25°C -43* ID a Continuous Drain Current (VGS=-10V) TA=100°C -27 IDM a 300 ms Pulsed Drain Current (VGS=-10V) -172* IS a Diode Continuous Forward Current -3 IAS b Avalanche Current, Single pulse (L=0.3mH) -20 A EAS b Avalanche Energy, Single pulse (L=0.3mH) 60 mJ TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 50 PD a Maximum Power Dissipation TA=100°C 20 W t £ 10s 20 RqJA a,c Thermal Resistance-Junction to Ambient Steady State 50 RqJC Thermal Resistance-Junction to case Steady State 2.5 °C/W Note a：Surface Mounted on 1in2 pad area, t £ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 o C). Note c：Maximum under Steady State conditions is 75 °C/W.

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) SM3020PSU Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics e Rg Gate Resistance VGS=0V, VDS=0V,F=1MHz - 3 - W Ciss Input Capacitance - 1000 - Coss Output Capacitance - 210 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 150 - pF td(ON) Turn-on Delay Time - 8 - tr Turn-on Rise Time - 12 - td(OFF) Turn-off Delay Time - 32 - tf Turn-off Fall Time VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=6W - 16 - ns Gate Charge Characteristics e Qg Total Gate Charge - 21 - Qgs Gate-Source Charge - 2.6 - Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-20A - 6.2 - nC Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=-10V 0.01 0.1 1 10 100 0.1 100 500 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RqJA :20 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 0 1 2 3 4 5 100 -5.5V -4.5V -3.5V -5V -6V -4V VGS=-7,-8,-9,-10V 0 10 20 30 40 50 60 VGS=-4.5V VGS=-10V 3 4 5 6 7 8 9 10 IDS=-20A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 14mW VGS = -10V IDS = -20A 0.1 100 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 Frequency=1MHz Crss Coss Ciss 0 3 6 9 12 15 18 210 VDS=-15V IDS=-20A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Classification Profile

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.