SM3017NSUC-TRG

SM3017NSU SINOPWER | Alldatasheet

Document overview

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• PDF pages: 12

Technical content

Features

Applications

• Power Management in Desktop Computer or DC/DC Converters.
• 30V/68A, RDS(ON)=7.2mW (max.) @ VGS=10V RDS(ON)=9.8mW (max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• 100% EAS (UIS) test
• ESD Protection N-Channel MOSFET Top View of TO-252-3 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G S D SM3017NS Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM3017NS U : SM3017N XXXXX XXXXX - Lot Code Assembly Material G S D

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 30 A TC=25°C 120 IDP 300μs Pulse Drain Current Tested TC=100°C 85 A TC=25°C 68 ID Continuous Drain Current TC=100°C 40 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W RqJC Thermal Resistance-Junction to Case Steady State 2.5 °C/W t £ 10s 20 RqJA Thermal Resistance-Junction to Ambient Steady State 45 °C/W IAS a Avalanche Current, Single pulse (L=0.5mH) 14 A EAS a Avalanche Energy, Single pulse (L=0.5mH) 50 mJ Note a：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS =0V - - 10 mA VGS=10V, IDS=30A - 5.9 7.2 TJ=125°C - 8.9 - RDS(ON) b Drain-Source On-state Resistance VGS=4.5V, IDS=15A - 7.6 9.8 mW Gfs Forward Transconductance VDS=5V, IDS=30A - 70 - S

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics VSD b Diode Forward Voltage ISD=15A, VGS=0V - 0.85 1.1 V trr Reverse Recovery Time - 15 - ta Charge Time - 8 - tb Discharge Time - 7 - ns Qrr Reverse Recovery Charge IDS=15A, dlSD/dt=100A/ms - 8 - nC Dynamic Characteristics c RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.7 1.2 1.7 W Ciss Input Capacitance 980 1180 1400 Coss Output Capacitance 158 190 228 Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 90 115 140 pF td(ON) Turn-on Delay Time - 14 20 tr Turn-on Rise Time - 12 18 td(OFF) Turn-off Delay Time - 30 45 tf Turn-off Fall Time VDD=15V, RL=15W, IDS=1A, VGEN =10V, RG=6W - 10 15 ns Gate Charge Characteristics c Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=30A - 8 11 Qg Total Gate Charge - 20 24 Qgth Threshold Gate Charge - 1.4 1.7 Qgs Gate-Source Charge - 2.3 2.8 Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=30A - 4.5 5 nC Note b：Pulse test ; pulse width £300ms, duty cycle £2%. Note c：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RqJA :45 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 Rds(on) Limit TC=25 O C 10ms 1ms 100ms DC

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mW) Gate-Source On Resistance 100 120 2.5V 3.5V -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA 0 20 40 60 80 100 120 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=30A

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) 0.1 100 Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 5.9mW VGS = 10V IDS = 30A 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 1600 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 VDS= 15V IDS= 30A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Typical Operating Characteristics (Cont.) Transfer Characteristics ID - Drain Current (A) VGS - Gate-Source Voltage (V) 100 Tj=125 o C Tj=25 o C Tj=-55 o C

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 16.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252-3 0.20 2.50±0.20 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 Classification Profile Taping Direction Information TO-252-3 USER DIRECTION OF FEED

www.sinopowersemi.com12Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.