SM3005NAF SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • 30V/110A, RDS(ON)= 3.9mΩ (max.) @ VGS=10V RDS(ON)= 5.2mΩ (max.) @ VGS=4.5V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • Power Management in Secondary Rectifier For SMPS. N-Channel MOSFET G S D Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM3005NA Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM3005NA F : SM3005NA XXXXX XXXXX - Lot Code Assembly Material Top View of TO-220 GDS

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 32 A IDP b Pulse Drain Current Tested TC=25°C 200 A ID Continuous Drain Current TC=25°C 110 a A TC=100°C 70 PD Maximum Power Dissipation TC=25°C 100 W TC=100°C 40 RθJC Thermal Resistance-Junction to Case 1.2 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 EAS c Avalanche Energy, Single Pulsed L=0.1mH 100 mJ Note a：Max. continuous current is limited by bonding wire. Silicon limited current is 125A base on max. junction temperature. Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 µA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 - 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) d Drain-Source On-state Resistance VGS=10V, IDS=40A - 3.3 3.9 mΩ VGS=4.5V, IDS=32A - 4 5.2 Diode Characteristics VSD d Diode Forward Voltage ISD=32A, VGS=0V - 0.8 1.1 V trr Reverse Recovery Time ISD=40A, dlSD/dt=100A/µs - 27 - ns Qrr Reverse Recovery Charge - 15 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.4 - Ω Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 2450 - pF Coss Output Capacitance - 520 - Crss Reverse Transfer Capacitance - 240 - td(ON) Turn-on Delay Time VDD=15V, RL=15Ω , IDS=1A, VGEN =10V, RG=6Ω - 20 37 ns tr Turn-on Rise Time - 16 30 td(OFF) Turn-off Delay Time - 48 87 tf Turn-off Fall Time - 21 39 Gate Charge Characteristics e Qg Total Gate Charge VDS=15V, VGS =10V, IDS=40A - 43 - nC Qg Total Gate Charge VDS=15V, VGS =4.5V, IDS=40A - 25 - Qgs Gate-Source Charge - 7.3 - Qgd Gate-Drain Charge - 12.3 - Note d：Pulse test ; pulse width ≤300µs, duty cycle ≤2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 100 120 TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on minimum pad RθJA :62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 100 120 TC=25 o C,VG=10V 0.01 0.1 1 10 100300 100 500 1ms 10ms 100ms DC Rds(on) Limit TC=25 o C

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 0 1 2 3 4 5 120 160 200 2.5V 3.5V 0 40 80 120 160 200 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 3.3mΩ VGS = 10V IDS = 40A 0.1 100 200 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 400 800 1200 1600 2000 2400 2800 3200 3600 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 45 VDS=15V IDS=40A

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com

Package Information

UNIT: mm 2.54 R0.52 L e P Q D H1D1 b E/2 E A c SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3668.38 9.30 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

Copyright  Sinopower Semiconductor, Inc. Rev. A.5 - June, 2015 www.sinopowersemi.com Classification Profile

Copyright  Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.