SM2054NSDC-TRG

SM2054NSD SINOPWER | Alldatasheet

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Technical content

Features

Applications

Ordering and Marking Information N-Channel MOSFET

• 20V/7.5A, RDS(ON)= 21mW(max.) @ VGS= 10V RDS(ON)= 23mW(max.) @ VGS= 4.5V RDS(ON)= 36mW(max.) @ VGS= 2.5V
• Reliable and Rugged
• ESD Protection
• Lead Free and Green Devices Available (RoHS Compliant) Top View SOT-89 Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• Switching Regulators
• Switching Converters G (1) S (3) D (2) SM2054NS Handling Code Temperature Range Package Code Package Code D : SOT-89 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (1000ea/reel) Assembly Material G : Halogen and Lead Free Device SM2054NS D: SM2054 XXXXX_N XXXXX - Lot Code Assembly Material G D S

www.sinopowersemi.com2 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 4 A TA=25°C 7.5 ID Continuous Drain Current TA=70°C 6 A IDM a Pulsed Drain Current TA=25°C 30 A TA=25°C 3.5 PD Maximum Power Dissipation TA=70°C 2.2 W t £ 10s 35 °C/W RqJA c Thermal Resistance-Junction to Ambient Steady State 70 °C/W IAS b Avalanche Current, Single pulse L=0.1mH 10 A EAS b Avalanche Energy, Single pulse L=0.1mH 5 mJ Note a：Pulse width limited by maximum junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Note c：Surface Mounted on 1in pad area.

www.sinopowersemi.com3 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 20 - - V VDS=16V, VGS =0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 0.5 0.75 1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±10 mA VGS=10V, IDS=7.5A - 17.5 21 VGS=4.5V, IDS=6A - 18.5 23 RDS(ON) d Drain-Source On-state Resistance VGS=2.5V, IDS=3A - 27 36 mW Diode Characteristics VSD d Diode Forward Voltage ISD=4A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 9 - ns Qrr Reverse Recovery Charge ISD=7.5A, dlSD/dt=100A/ms - 2.5 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 1.7 - W Ciss Input Capacitance - 400 520 Coss Output Capacitance - 85 - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 75 - pF td(ON) Turn-on Delay Time - 3.5 6.5 tr Turn-on Rise Time - 14 25 td(OFF) Turn-off Delay Time - 20 36 tf Turn-off Fall Time VDD=10V, RL=10W, IDS=1A, VGEN =10V, RG=6W - 4 7 ns Gate Charge Characteristics e Qg Total Gate Charge VDS=10V, VGS =4.5V, IDS=7.5A - 5.5 - Qg Total Gate Charge - 11.5 15 Qgs Gate-Source Charge - 0.3 - Qgd Gate-Drain Charge VDS=10V, VGS =10V, IDS=7.5A - 2.6 - nC Note d：Pulse test; pulse width £300ms, duty cycle £2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100 0.01 0.1 100 300ms Rds(on) Limit TA=25 o C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RqJA : 35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A)VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Typical Operating Characteristics (Cont.) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage 1.8V 1.5V 1 2 3 4 5 6 7 8 9 10 100 120 IDS=7.5A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA 0 5 10 15 20 25 30 VGS=2.5V VGS=4.5V VGS=10V

www.sinopowersemi.com6 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Typical Operating Characteristics (Cont.) Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 17.5mW VGS =10V IDS =7.5A 0.1 Tj=150 o C Tj=25 o C 0 2 4 6 8 10 12 VDS =10V IDS =7.5A 0 4 8 12 16 20 160 240 320 400 480 560 640 720 Frequency=1MHz Crss Coss Ciss

www.sinopowersemi.com7 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013

Package Information

UNIT: mm A C e BB1 D H EL -T-SEATING PLANE <10 mils Note : Follow JEDEC TO-243 AA. 1.8 2.3751.2 1.5 SYMBO MIN. MAX. MILLIMETERS SOT-89 MIN. MAX. INCHES 1.60 0.44 0.35 0.44 4.40 4.60 1.62 1.83 0.56 2.13 A B C D E e B1 0.36 0.48

3.00 BSC

3.94 4.25 2.29 2.60 2.29

0.118 BSC

0.063 0.017 0.014 0.019 0.014 0.017 0.173 0.181 0.064 0.072 0.084 0.155 0.167 0.090 0.102 0.090 0.022 L 0.89 0.035 H 1.50 BSC 0.059 BSC 1.40 1.20 0.047 0.055 L

www.sinopowersemi.com9 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 SOT-89

www.sinopowersemi.com10 SM2054NSD Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013 Taping Direction Information SOT-89 Classification Profile USER DIRECTION OF FEED

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.