SM2030NSU SINOPWER | Alldatasheet

Document overview

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Technical content

Features

Applications

  • Power Management in Desktop Computer or DC/DC Converters.
  • 20V/30A, RDS(ON)= 20.5mW (Max.) @ VGS=4.5V RDS(ON)= 29mW (Max.) @ VGS=2.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET G S D SM2030NS Handling Code Temperature Range Package Code Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM2030NS U : SM2030N XXXXX XXXXX - Lot Code Assembly Material Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Top View of TO-252

1 Gate

3 Source2

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 3 A TC=25°C 30 ID Continuous Drain Current TC=100°C 19 IDM a Pulsed Drain Current TC=25°C 40 A TC=25°C 27.8 PD Maximum Power Dissipation TC=100°C 11.1 W RqJC Thermal Resistance-Junction to Case 4.5 °C/W TA=25°C 9 ID Continuous Drain Current TA=70°C 7 A TA=25°C 2.5 PD Maximum Power Dissipation TA=70°C 1.6 W RqJA c Thermal Resistance-Junction to Ambient 50 °C/W IAS b Avalanche Current, Single pulse L=0.1mH 13 A EAS b Avalanche Energy, Single pulse L=0.1mH 8.45 mJ Note a：Max. current is limited by bonding wire. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Note c：Surface Mounted on 1in 2 pad area. Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 20 - - V VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS =250mA 0.5 0.7 1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA VGS=4.5V, IDS=15A - 16.5 20.5 RDS(ON) d Drain-Source On-state Resistance VGS=2.5V, IDS=7A - 21.5 29 mW Diode Characteristics VSD d Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.3 V trr Reverse Recovery Time - 9 - ns Qrr Reverse Recovery Charge ISD=8A, dlSD/dt=100A/ms - 3 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 1.3 - W Ciss Input Capacitance - 600 780 Coss Output Capacitance - 100 - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 72 - pF td(ON) Turn-on Delay Time - 8.5 15.5 tr Turn-on Rise Time - 13 23.5 td(OFF) Turn-off Delay Time - 23.5 42.5 tf Turn-off Fall Time VDD=10V, RL=10W, IDS=1A, VGEN =10V, RG=6W - 4 7.5 ns Gate Charge Characteristics e Qg Total Gate Charge - 6.5 8.5 Qgs Gate-Source Charge - 0.9 - Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=15A - 2 - nC Note d：Pulse test ; pulse width £300ms, duty cycle £2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :4.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 10ms 1ms DC Rds(on) Limit TC=25 o C

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 1.5V -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA 0 8 16 24 32 40 VGS=2.5V VGS=4.5V 1 2 3 4 5 6 7 8 9 10 IDS=15A

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) 0.1 Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 16.5mW VGS = 4.5V IDS = 15A 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 Frequency=1MHz Crss Coss Ciss 0 3 6 9 12 15 VDS= 10V IDS= 15A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c Note : Follow JEDEC TO-252 . SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 TO-252 (mm)

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 Classification Profile Taping Direction Information TO-252 USER DIRECTION OF FEED

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.