SM2015PSKPC-TRG

SM2015PSKP SINOPWER | Alldatasheet

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Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com P-Channel Enhancement Mode MOSFET Features Pin Description

• -20V/-73A RDS(ON)=4.7mΩ(max.)@VGS=-4.5V RDS(ON)=7.5mΩ(max.)@VGS=-2.5V RDS(ON)=11.7mΩ(max.)@VGS=-1.8V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)

Applications

• Portable Equipment applications
• For E-cigarette battery protection application
• Load switch DFN5x6A-8_EP SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G D S Ordering and Marking Information P-Channel MOSFET S S S G D D D D Pin 1 SM2015PS KP : 2015PSXXXXX● XXXXX - Lot Code SM2015PS Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6A-8_EP Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C -36 A ID Continuous Drain Current TC=25°C -73 ATC=100°C -46 IDM a Pulsed Drain Current TC=25°C -292 PD Maximum Power Dissipation TC=25°C 40 W TC=100°C 16 RqJC Thermal Resistance-Junction to Case Steady state 3.1 °C/W ID Continuous Drain Current TA=25°C -16.6 A TA=70°C -13.3 PD Maximum Power Dissipation TA=25°C 2.08 W TA=70°C 1.33 RqJA b Thermal Resistance-Junction to Ambient Steady state 60 °C/W IAS c Avalanche Current, Single pulse L=0.5mH -22 A EAS c Avalanche Energy, Single pulse L=0.5mH 121 mJ Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in pad area. Note c：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 o C).

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -20 - - V IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V - - -1 mA TJ=85°C - - -30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -0.5 -0.7 -1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA RDS(ON) d Drain-Source On-state Resistance VGS=-4.5V, IDS=-25A - 3.9 4.7 mWVGS=-2.5V, IDS=-15A - 5.3 7.5 VGS=-1.8V, IDS=-5A - 7.8 11.7 Diode Characteristics VSD d Diode Forward Voltage ISD=-1A, VGS=0V - -0.65 -1 V trr Reverse Recovery Time ISD=-25A, dlSD/dt=100A/ms - 44 - ns Qrr Reverse Recovery Charge - 30 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.0 - W Ciss Input Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz - 6000 7800 pFCoss Output Capacitance - 1000 - Crss Reverse Transfer Capacitance - 800 - td(ON) Turn-on Delay Time VDD=-10V, RL=10W, IDS=-1A, VGEN=-10V, RG=6W - 16 29 ns tr Turn-on Rise Time - 18 33 td(OFF) Turn-off Delay Time - 230 414 tf Turn-off Fall Time - 85 153 Gate Charge Characteristics e Qg Total Gate Charge VDS=-10V, VGS=-4.5V, IDS=-25A - 63 87 nCQgs Gate-Source Charge - 7.9 - Qgd Gate-Drain Charge - 22 - Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing.nd on package type.

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 0 20 40 60 80 100 120 140 1600 TC=25 o C,VG=-4.5V 0 20 40 60 80 100 120 140 1600 TC=25 o C Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) -ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.51E-3 0.01 0.1 RqJC :3.1 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com Typical Operating Characteristics(Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) 0 20 40 60 80 1000 VGS=-1.8V VGS=-2.5V VGS=-4.5V 120 160 200 VGS=-2.5,-3,-4,-5, -6,-7,-8,-9,-10V -2V -1.5V -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ) Gate-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) -50 -25 0 25 50 75 100 125 1500.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250mA 0 1 2 3 4 5 6 7 80 IDS=-25A -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Normalized Threshold Voltage

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com6 Typical Operating Characteristics(Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 100 Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100 125 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 3.9mW VGS =-4.5V IDS =-25A Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) -IS - Source Current (A) Capacitance Gate Charge C - Capacitance (pF) 0 20 40 60 80 100 120 1400 VDS=-10V IDS=-25A 0 4 8 12 16 200 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency=1MHz Crss Coss Ciss -VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) -VGS - Gate-source Voltage (V)

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com7 Typical Operating Characteristics(Cont.) Transfer Characteristics -ID - Drain Current (A) 120 160 200 Tj=125 o C Tj=25 o C -VGS - Gate-Source Voltage (V)

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com8 Avalanche Test Circuit and Waveforms DUT 0.01W VDD VDS L IL RG tp EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com9 Disclaimer Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright © Sinopower Semiconductor Inc. Rev. A.2 - March, 2019 www.sinopowersemi.com10 Classification Profile

Copyright © Sinopower Semiconductor Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Table 2. Pb-free Process – Classification Temperatures (Tc) Sinopower Semiconductor Inc.