SM2011PSKP SINOPWER | Alldatasheet

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Ordering and Marking Information P-Channel MOSFET

  • -20V/-100Aa, RDS(ON) = 2mW(max.) @ VGS =-10V RDS(ON) = 2.5mW(max.) @ VGS =-4.5V RDS(ON) = 4.2mW(max.) @ VGS =-2.5V
  • 100% UIS + Rg Tested
  • ESD Protection
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • Portable Equipment applications
  • For E-cigarette battery protection application
  • Load switch G S D D ( 5,6,7,8 ) (4) (1, 2, 3) DD SS DFN5x6A-8_EP S S S G D D D D SM2011PS Handling Code Temperature Range Package Code Package Code KP : DFN5x6A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM2011PS KP : XXXXX - Lot Code Assembly Material 2011PS XXXXX Pin 1

www.sinopowersemi.com2 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C -100 a A ID Continuous Drain Current TC=25°C -100 a TC=100°C -100 a IDM b Pulsed Drain Current TC=25°C -400 PD Maximum Power Dissipation TC=25°C 104 W TC=100°C 41.6 RqJC Thermal Resistance-Junction to Case Steady State 1.2 °C/W ID Continuous Drain Current TA=25°C -26 A TA=70°C -21 PD Maximum Power Dissipation TA=25°C 2.08 W TA=70°C 1.33 RqJA c Thermal Resistance-Junction to Ambient Steady State 60 °C/W IAS d Avalanche Current, Single pulse L=0.5mH -22 A EAS d Avalanche Energy, Single pulse L=0.5mH 121 mJ Note a：Package is limited to 100A. Note b：Pulse width limited by max. junction temperature. Note c：Surface Mounted on 1in2 pad area. Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).

www.sinopowersemi.com3 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS= -250mA -20 - - V IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS= -250mA -0.5 -0.85 -1.3 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±10 mA RDS(ON) e Drain-Source On-state Resistance VGS=-10V, IDS=-20A - 1.6 2 mW VGS=-4.5V, IDS=-20A - 2 2.5 mW VGS=-2.5V, IDS=-20A - 2.7 4.2 mW Diode Characteristics VSD e Diode Forward Voltage ISD=-1A VGS=0V -0.3 -0.6 -1.0 V trr Reverse Recovery Time ISD=-20A, dlSD/dt=100A/ms - 75 - ns Qrr Reverse Recovery Charge - 75 - nC Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.3 - W Ciss Input Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz - 12500 16250 pF Coss Output Capacitance - 2450 - Crss Reverse Transfer Capacitance - 2250 - td(ON) Turn-on Delay Time VDD=-10V, RL=10W, IDS=-1A, VGEN=-10V, RG=6W - 23 42 ns tr Turn-on Rise Time - 29 53 td(OFF) Turn-off Delay Time - 720 1300 tf Turn-off Fall Time - 330 600 Gate Charge Characteristics f Qg Total Gate Charge VDS=-10V, VGS=-4.5V, IDS=-20A - 140 196 nC Qgs Gate-Source Charge - 22 - Qgd Gate-Drain Charge - 41 - Note e：Pulse test ; pulse width£300ms, duty cycle£2%. Note f：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 100 120 TC=25 o C 0 20 40 60 80 100120140160 100 120 TC=25 o C,VG=-10V 0.01 0.1 1 10 100 100 600 300ms 100ms 10ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :1.2 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Output Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m W) 120 150 -2V -1.5V 0 20 40 60 80 100 120 140 VGS=-2.5V VGS=-10V VGS=-4.5V 1 2 3 4 5 6 7 8 9 10 IDS=-20A -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA

www.sinopowersemi.com6 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Typical Operating Characteristics (Cont.) -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 1.6mW VGS = -10V IDS = -20A 0.1 100 200 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS=-10V IDS=-20A

www.sinopowersemi.com7 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com8 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com9 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.