SM2006NSK SINOPWER | Alldatasheet
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Technical content
Features
Applications
- Power Management in Desktop Computer or DC/DC Converters. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
- 20V/10A, RDS(ON) = 18mΩ (max.) @ VGS = 4.5V RDS(ON) = 27mΩ (max.) @ VGS = 2.5V
- 100% UIS Tested
- Reliable and Rugged
- Lead Free Available (RoHS Compliant) SM2006NS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM2006NS K : XXXXX - Lot Code Assembly Material 2006NS XXXXX N-Channel MOSFET Top View of SOP-8 G S D D S S D D ( 5,6,7,8 ) (4) (1, 2, 3) S S S G D D D D
www.sinopowersemi.com2Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 3 A IDP a Pulse Drain Current Tested VGS =10V(N),VGS=-10V(P) 40 A TA=25°C 10 ID Continuous Drain Current TA=70°C 8 A TA=25°C 2.8 PD b Maximum Power Dissipation TA=70°C 1.8 W t ≤ 10s 45 RθJA c Thermal Resistance-Junction to Ambient Steady State 80 °C/W IAS d Avalanche Current, Single pulse L=0.1mH 13 A EAS d Avalanche Energy, Single pulse L=0.1mH 8.45 mJ Note a：Pulse width limited by max. junction temperature. Note b：t ＜10sec. Note c：RθJA steady state t=999s. R θJA is measured with the device mounted on 1in 2, FR-4 board with 2oz. Copper. Note d：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature T j=25oC). Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
www.sinopowersemi.com3Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 - - V VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.7 1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA VGS=4.5V, IDS=10A - 14.5 18 RDS(ON) e Drain-Source On-state Resistance VGS=2.5V, IDS=8A - 20 27 mΩ Diode Characteristics VSD e Diode Forward Voltage ISD=3A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time - 9 - ns Qrr Reverse Recovery Charge IDS=8A, dlSD/dt=100A/µs - 3 - nC Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.3 - Ω Ciss Input Capacitance - 600 - Coss Output Capacitance - 100 - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 72 - pF td(ON) Turn-on Delay Time - 5.3 10 tr Turn-on Rise Time - 14.5 27 td(OFF) Turn-off Delay Time - 19.5 36 tf Turn-off Fall Time VDD=10V, RL=10Ω , IDS=1A, VGEN=10V, RG=6Ω - 2.8 5 ns Gate Charge Characteristics f Qg Total Gate Charge - 6.8 10 Qgth Threshold Gate Charge - 0.25 - Qgs Gate-Source Charge - 1.3 - Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=10A - 2.3 - nC Note e：Pulse test ; pulse width ≤300µs, duty cycle ≤2%. Note f：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
www.sinopowersemi.com4Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 0.01 0.1 100 300µs Rds(on) Limit TA=25 o C 10ms 1ms 100ms DC 1E-41E-3 0.01 0.1 1 10 100500 0.01 0.1 Mounted on 1in pad RθJA : 45 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Operating Characteristics
www.sinopowersemi.com5Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ ) Gate-Source On Resistance 1.5V 0 8 16 24 32 40 VGS=2.5V VGS=4.5V 1 2 3 4 5 6 7 8 9 10 IDS=10A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA Typical Operating Characteristics (Cont.)
www.sinopowersemi.com6Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 14.5mΩ VGS = 4.5V IDS = 10A 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 VDS= 10V IDS= 10A Typical Operating Characteristics (Cont.)
www.sinopowersemi.com7Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%
www.sinopowersemi.com8Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014
Package Information
UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -
www.sinopowersemi.com9Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1
www.sinopowersemi.com10Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile
www.sinopowersemi.com11Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2014 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
www.sinopowersemi.com12Copyright Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.
- Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.