SM2001CSK

SM2001CSK SINOPWER | Alldatasheet

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Technical content

Features

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Ordering and Marking Information

• N-Channel 20V/9.5A, RDS(ON) =14mW(max.) @ VGS = 4.5V RDS(ON) =18mW(max.) @ VGS = 2.5V
• P-Channel -20V/-6A, RDS(ON) =45mW(max.) @ VGS =-4.5V RDS(ON) =65mW(max.) @ VGS =-2.5V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET (5) (6) (4) (3) D1 D1 (8) (7) (2) (1) SM2001CS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM2001CS K : XXXXX - Lot Code Assembly Material 2001 XXXXX

www.sinopowersemi.com2 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Channel 1 Channel 2 Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±12 ±12 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 1.8 -1.2 ID Continuous Drain Current TA=25°C 9.5 -6 IDM a Pulsed Drain Current TA=25°C 30 -20 A TA=25°C 2 2 PD Power Dissipation TA=70°C 1.3 1.3 W t £ 10s 45 45 RqJA Thermal Resistance-Junction to Ambient Steady State 62.5 62.5 RqJL Thermal Resistance-Junction to Lead Steady State 20 20 °C/W IAS b Avalanche Current, Single pulse (L=0.1mH) 16 -15 A EAS b Avalanche Energy, Single pulse (L=0.1mH) 12 11 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25 oC).

www.sinopowersemi.com3 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Channel 1 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 20 - - V IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 0.5 0.7 1.0 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA RDS(ON) Drain-Source On-state Resistance VGS=4.5V, IDS=9A - 12 14 mW VGS=2.5V, IDS=6A - 13.5 18 Diode Characteristics VSD Diode Forward Voltage ISD=1.5A, VGS=0V - 0.67 1.1 V trr Reverse Recovery Time IDS=6A, dlSD/dt=100A/ms - 11.8 - ns Qrr Reverse Recovery Charge - 3.6 - nC Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 0.7 - W Ciss Input Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 795 - pF Coss Output Capacitance - 160 - Crss Reverse Transfer Capacitance - 118 - td(ON) Turn-on Delay Time VDD=10V, RL=10W, IDS=1A, VGEN=4.5V, RG=1W - 10.2 19 ns tr Turn-on Rise Time - 16.1 30 td(OFF) Turn-off Delay Time - 16.6 31 tf Turn-off Fall Time - 3.6 7 Gate Charge Characteristics Qg Total Gate Charge VDS=10V, VGS=4.5V, IDS=6A - 8.7 - nC Qgs Gate-Source Charge - 1.25 - Qgd Gate-Drain Charge - 3 - Qgth Threshold Gate Charge - 0.54 -

www.sinopowersemi.com4 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Channel 2 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=-250μA -20 - - V IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V - - -1 mA TJ=85°C - - -30 uA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250mA -0.5 -0.7 -1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA RDS(ON) Drain-Source On-state Resistance VGS=-4.5V, IDS=-6A - 36 45 mW VGS=-2.5V, IDS=-4A - 50 65 Diode Characteristics VSD Diode Forward Voltage ISD=-1.2A, VGS=0V - -0.7 -1 V trr Reverse Recovery Time Isd=-6A, dlSD/dt=100A/ms - 12 - ns Qrr Reverse Recovery Charge - 4.5 - nC Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.5 - W Ciss Input Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz - 590 - pF Coss Output Capacitance - 122 - Crss Reverse Transfer Capacitance - 92 - td(ON) Turn-on Delay Time VDD=-10V, RL=10W, IDS=-1A, VGEN=-4.5V, RG=1W - 8.4 16 ns tr Turn-on Rise Time - 14.1 26 td(OFF) Turn-off Delay Time - 16 30 tf Turn-off Fall Time - 10.7 20 Gate Charge Characteristics Qg Total Gate Charge VDS=-10V, VGS=-4.5V, IDS=-6A - 7.68 - nC Qgs Gate-Source Charge - 0.66 - Qgd Gate-Drain Charge - 2.72 - Qgth Threshold Gate Charge - 0.3 -

www.sinopowersemi.com5 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 ID - Drain Current (A) Drain Current TJ- Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) TJ - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 TA=25 o C N Channel Typical Operating Characteristics 0 20 40 60 80 100120140160 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RqJA : 45 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com6 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 RDS(ON) - On - Resistance (W) Drain-Source On Resistance ID - Drain Current (A) TJ - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) Normalized Threshold Voltage N Channel Typical Operating Characteristics (Cont.) 1.5V 0 5 10 15 20 25 30 VGS=2.5V VGS=4.5V 0 1 2 3 4 5 6 7 8 9 10 IDS=9A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA RDS(ON) - On - Resistance (mW)

www.sinopowersemi.com7 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance TJ - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) N Channel Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 12mW VGS = 4.5V IDS = 9A 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 150 300 450 600 750 900 1050 1200 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 200 VDS=10V IDS=6A

www.sinopowersemi.com8 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Transfer Characteristics ID - Drain Current (A) VGS - Gate-Source Voltage (V) N Channel Typical Operating Characteristics (Cont.) TJ=-55 o C TJ=25 o C TJ=125 o C ID - Drain Current (A)

www.sinopowersemi.com9 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Power Dissipation Ptot - Power (W) TJ- Junction Temperature ( °C) -ID - Drain Current (A) Drain Current TJ - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) -ID - Drain Current (A) Normalized Transient Thermal Resistance P Channel Typical Operating Characteristics 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RqJA : 45 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com10 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 RDS(ON) - On - Resistance (W) Drain-Source On Resistance -ID - Drain Current (A)-VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics TJ - Junction Temperature (°C) Gate Threshold VoltageTransfer Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage P Channel Typical Operating Characteristics (Cont.) -2V -1.5V -7,-8,-9,-10V 0 4 8 12 16 20 VGS=-4.5V VGS=-2.5V 1 2 3 4 5 6 7 8 9 10 100 120 140 IDS=-6A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS = -250mA RDS(ON) - On - Resistance (mW)

www.sinopowersemi.com11 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Drain-Source On Resistance Normalized On Resistance TJ- Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) -VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) P Channel Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 36mW VGS = -4.5V IDS = -6A 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 VDS=-10V IDS=-6A

www.sinopowersemi.com12 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 P Channel Typical Operating Characteristics (Cont.) Transfer Characteristics -ID - Drain Current (A) -VGS - Gate-Source Voltage (V) Tj=125 o C Tj=25 o C Tj=-55 o C

www.sinopowersemi.com13 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp N Channel P Channel N Channel P Channel EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS)

www.sinopowersemi.com14 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com15 SM2001CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2018 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.