SFS9926

SFS9926 SEMIWELL | Alldatasheet

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■ Low RDS(on) (0.030Ω )@VGS=4.5V Low RDS(on) (0.043Ω )@VGS=2.5V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capability ■ Maximum Junction Temperature Range (150°C) ■ Available in Tape and Reel General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for Battery protection circuit, Load switch and other power management application. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Dual N-Channel MOSFET 8-SOIC Symbol G2S2

Electrical Characteristics ( TJ = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -2 4 - m V / ° C IDSS Drain-Source Leakage Current VDS = 16V, VGS = 0V -- 1 u A IGSS Gate-Source Leakage, Forward VGS = 12V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -12V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 - 1.5 V RDS(ON) Static Drain-Source On-state Resistance VGS = 4.5 V, ID = 6.5A VGS = 2.5 V, ID = 5.4A 0.025 0.036 0.030 0.043 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =10V, f = 1MHz -6 4 5 - pFCoss Output Capacitance - 350 - Crss Reverse Transfer Capacitance - 115 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =10V, ID =1A, RG =50 Ω VGS =4.5V (Note 2,3) -9 2 8 ns tr Rise Time - 45 100 td(off) Turn-off Delay Time - 95 200 tf Fall Time - 60 130 Qg Total Gate Charge VDS =10V, VGS =4.5V, ID =4.5A (Note 2,3) -1 4 1 8 nCQgs Gate-Source Charge - 2.5 - Qgd Gate-Drain Charge(Miller Charge) - 5 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Cond itions Min. Typ. Max. Unit. IS Maximum Continuous Diode Forward Current - - 1.3 A VSD Diode Forward Voltage I S =1.3A, VGS =0V (Note 2) -- 1 . 2 V ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

o C o C -55 o C Notes :※ 1. VDS = 5V 2. 250µ s Pulse Test ID, Drain Current [A] VGS, Gate-Source Voltage [V] 150℃ Notes :※ 1. VGS = 0V 2. 250µ s Pulse Test 25℃ IDR, Reverse Drain Current [A] VSD, Source-Drain voltage [V] VGS Top : 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V Bottom : 2.0 V Notes :※ 1. 250µ s Pulse Test 2. T C = 25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] 0369 1 2 1 5 1 8 VDS = 10V VDS = 16V Note : I※ D = 6.5A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 0 5 10 15 20 25 250 500 750 1000 1250 1500 Crss Coss Ciss Notes :※ 1. VGS = 0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] 0 5 10 15 20 25 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 VGS = 4.5V VGS = 2.5V Note : T※ J = 25℃ RDS(ON), Drain-Source On-Resistance [Ω ] ID, Drain Current [A] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFS9926 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

-100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 Notes :※ 1. VGS = 4.5 V 2. ID = 6.5 A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes :※ 1. VGS = 0 V 2. ID = 250 µ A BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o Notes :※ 1. Z θ JA(t) = 62.5 /W ℃ 2. D uty Factor, D =t 1 /t 2 3. T JM - T A = P DM * Z θ JA(t) single pulse D=0.5 0.02 0.2 0.05 0.1 Zθ JA Normalized, Thermal Response t1 , Square Wave Pulse Duration [sec] Fig 9. Normalized Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature SFS9926 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

Fig 11. Switching Time Test Circuit & Waveforms SFS9926 Fig. 10. Gate Charge Test Circuit & Waveforms Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 4.5V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 4.5V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 4.5V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG VinVin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 4.5V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG Vin

Dim. mm Inch G 1.27 BSC SFS9926 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. A B 0.1 E G C D J H I K 45°× 0.254(Gap plane) F