SFS9410

SFS9410 SEMIWELL | Alldatasheet

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■ RDS(on) (Max 0.028Ω )@VGS=10V RDS(on) (Max 0.042Ω )@VGS=4.5V ■ Gate Charge (Typical 18nC) ■ Maximum Junction Temperature Range (150°C) ■ Available in Tape and Reel General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for power management circuit or DC-DC converter. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET 8-SOIC Symbol S G D D D D S S D D D D S S G S

Electrical Characteristics ( TJ = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 13.5 - mV/°C IDSS Drain-Source Leakage Current VDS = 24V, VGS = 0V -- 2 u A IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - - V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 7.3A VGS = 4.5 V, ID = 6.3A 0.020 0.025 0.028 0.042 Ω Dynamic Characteristics Ciss Input Capacitance VGS = 0 V, VDS = 15V, f = 1MHz - 640 830 pFCoss Output Capacitance - 280 360 Crss Reverse Transfer Capacitance - 95 120 Dynamic Characteristics td(on) Turn-on Delay Time VDD = 25V, ID = 1A, RG = 50Ω VGS = 10 V (Note 2,3) -9 1 6 ns tr Rise Time - 16 30 td(off) Turn-off Delay Time - 100 185 tf Fall Time - 40 60 Qg Total Gate Charge VDS = 15V, VGS = 10V, ID = 2A (Note 2,3) -1 8 2 3 nCQgs Gate-Source Charge - 1.5 - Qgd Gate-Drain Charge(Miller Charge) - 5 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Cond itions Min. Typ. Max. Unit. IS Continuous Source Diode Forward Current - - 2.2 A VSD Diode Forward Voltage I S = 2.2A, VGS =0V (Note 2) -- 1 . 1 V ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board.

VDS = 15V VDS = 24V Note : I※ D = 2 A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 0 5 10 15 20 25 250 500 750 1000 1250 1500 Crss Coss Ciss Notes :※ 1. VGS = 0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] 150℃ Notes :※ 1. VGS = 0V 2. 250µ s Pulse Test 25℃ IDR, Reverse Drain Current [A] VSD, Source-Drain voltage [V] 0 5 10 15 20 25 30 VGS = 10V VGS = 4.5V Note : T※ J = 25℃ RDS(ON), Drain-Source On-Resistance [mΩ ] ID, Drain Current [A] 0246 150 o C o C -55 o C Notes :※ 1. VDS = 40V 2. 250µ s Pulse Test ID, Drain Current [A] VGS, Gate-Source Voltage [V] VGS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Notes :※ 1. 250µ s Pulse Test 2. TC = 25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFS9410 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

N otes :※ 1. Z θ JC(t) = 1.0 /W M ax.℃ 2. Duty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Zθ JC (t), Thermal Response t1 , Square Wave Pulse Duration [sec] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 Notes :※ 1. VGS = 10 V 2. ID = 7.3 A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes :※ 1. VGS = 0 V 2. ID = 250 µ A BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o Fig 9. Normalized Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature SFS9410

Fig 11. Switching Time Test Circuit & Waveforms SFS9410 Fig. 10. Gate Charge Test Circuit & Waveforms Charge VGS 10V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd Charge VGS 10V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Vin VDS 10% 90% td(on) tr ton toff td(off) tf 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf VDDVDD V VDS RL DUT Pulse Generator RG VinVin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf VDDVDDVDDVDD V VDS RL DUT Pulse Generator RG Vin

Dim. mm Inch G 1.27 BSC SFS9410 A B 0.1 E G C D J H I K 45°× 0.254(Gap plane) F