SFS4416 SEMIWELL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

■ Low RDS(on) (Max 0.018Ω )@VGS=10V Low RDS(on) (Max 0.028Ω )@VGS=4.5V ■ Gate Charge (Typical 16nC) ■ Maximum Junction Temperature Range (150°C) ■ Available in Tape and Reel General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for power management circuit or DC-DC converter. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET 8-SOIC Symbol S G D D D D S S D D D D S S G S

Electrical Characteristics ( TJ = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -1 5 - m V / ° C IDSS Drain-Source Leakage Current VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 °C -- 1 25 uA IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - - V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 9A VGS = 4.5 V, ID = 7.3A 0.013 0.018 0.018 0.028 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =15V, f = 1MHz -9 2 0 - pFCoss Output Capacitance - 490 - Crss Reverse Transfer Capacitance - 150 - Dynamic Characteristics td(on) Turn-on Delay Time VDD = 15V, ID = 1A, RG = 50Ω VGS = 10 V (Note 2,3) -1 3 2 0 ns tr Rise Time - 23 50 td(off) Turn-off Delay Time - 130 150 tf Fall Time - 65 100 Qg Total Gate Charge VDS = 15V, VGS = 5V, ID = 9A (Note 2,3) -1 6 2 0 nCQgs Gate-Source Charge - 4 - Qgd Gate-Drain Charge(Miller Charge) - 7.5 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Cond itions Min. Typ. Max. Unit. IS Continuous Source Diode Forward Current - - 2.1 A VSD Diode Forward Voltage I S = 2.1A, VGS =0V (Note 2) -- 1 . 2 V ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board.

0 5 10 15 20 25 30 35 40 45 50 VGS = 10V VGS = 4.5V Note : T※ J = 25℃ RDS(ON), Drain-Source On-Resistance [mΩ ] ID, Drain Current [A] 150℃ Notes :※ 1. VGS = 0V 2. 250µ s Pulse Test 25℃ IDR, Reverse Drain Current [A] VSD, Source-Drain voltage [V] 012345 150 o C o C -55 o C Notes :※ 1. VDS = 15V 2. 250µ s Pulse Test ID, Drain Current [A] VGS, Gate-Source Voltage [V] VGS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Notes :※ 1. 250µ s Pulse Test 2. TC = 25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 VDS = 15V VDS = 24V Note : I※ D = 1 A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 0 5 10 15 20 25 30 500 1000 1500 2000 2500 Crss Coss Ciss Notes :※ 1. VGS = 0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFS4416 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

-100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 Notes :※ 1. VGS = 10 V 2. ID = 9 A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes :※ 1. VGS = 0 V 2. ID = 250 µ A BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o N otes :※ 1. Z θ JC(t) = 1.0 /W M ax.℃ 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Zθ JC (t), Thermal Response t1 , Square Wave Pulse Duration [sec] Fig 9. Normalized Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature SFS4416

Fig 11. Switching Time Test Circuit & Waveforms SFS4416 Fig. 10. Gate Charge Test Circuit & Waveforms Vin VDS 10% 90% td(on) tr ton toff td(off) tf 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf VDDVDD V VDS RL DUT Pulse Generator RG VinVin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr ton toff td(off) tf Vin VDS 10% 90% td(on) tr ton toff td(off) tf VDDVDDVDDVDD V VDS RL DUT Pulse Generator RG Vin Charge VGS Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS Qg Qgs Qgd Charge VGS Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS V Qg Qgs Qgd Charge VGS V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT

Dim. mm Inch G 1.27 BSC SFS4416 A B 0.1 E G C D J H I K 45°× 0.254(Gap plane) F