SFH054

SFH054 SEMIWELL | Alldatasheet

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Features

■ Low RDS(on) (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) ■ Low Crss (Typical 160pF) ■ Improved dv/dt Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. N-Channel MOSFET TO-247 SemiWell Semiconductor Symbol 2. Drain 3. Source 1. Gate Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. PRELIMINARY

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 1mA, referenced to 25 °C - 0.056 - V/°C IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V -- 1 u A VDS = 48V, TC = 150 °C -- 1 0 u A IGSS Gate-Source Leakage, Forward VGS = 25V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -25V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 35A - - 0.014 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 2350 3050 pFCoss Output Capacitance - 690 890 Crss Reverse Transfer Capacitance - 160 200 Dynamic Characteristics td(on) Turn-on Delay Time VDD =30V, ID =35A, RG =50Ω ※ see fig. 13. (Note 4, 5) -3 0 7 0 ns tr Rise Time - 60 130 td(off) Turn-off Delay Time - 125 260 tf Fall Time - 95 200 Qg Total Gate Charge VDS =48V, VGS =10V, ID =70A ※ see fig. 12. (Note 4, 5) -7 0 9 0 nCQgs Gate-Source Charge - 18 - Qgd Gate-Drain Charge(Miller Charge) - 24 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 0 AISM Pulsed Source Current - - 360 VSD Diode Forward Voltage I S =70A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS=70A,VGS=0V,dIF/dt=100A/us -6 2 -n s Qrr Reverse Recovery Charge - 110 - nC ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 250 uH, IAS = 70A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C 3. ISD ≤ 70A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. * Current limited by package,(Die Current=90A)

175℃ Notes :※ 1. VGS = 0V 2. 250µ s Pulse Test 25℃ IDR, Reverse Drain Current [A] VSD, Source-Drain voltage [V] 0 50 100 150 200 250 300 VGS = 10V VGS = 20V Note : T※ J = 25℃ RDS(ON), Drain-Source On-Resistance [mΩ ] ID, Drain Current [A] 2468 1 0 175 o C o C -55 o C Notes :※ 1. VDS = 25V 2. 250µ s Pulse Test ID, Drain Current [A] VGS, Gate-Source Voltage [V] VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Notes :※ 1. 250µ s Pulse Test 2. TC = 25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] 0 1 02 03 04 05 06 07 0 VDS = 30V VDS = 48V Note : I※ D = 70.0 A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 0 5 10 15 20 25 30 35 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 Crss Coss Ciss Notes :※ 1. VGS = 0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFH054 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

100 µs Operation in This Area is Limited by R DS(on) Notes :※ 1. TC = 25 o C 2. TJ = 175 o C 3. Single Pulse ID, Drain Current [A] VDS, Drain-Source Voltage [V] Not es :※ 1. Z θ JC(t) = 0.65 /W Max.℃ 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC(t) single pulse D=0. 5 0.02 0.2 0.05 0.1 0.01 Zθ JC(t), Thermal Response t1 , Square W ave Pulse Duration [sec] 25 50 75 100 125 150 175 100 limited by Package ID' Drain Current [A] TC' Case Temperature [ o -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes :※ 1. VGS = 10 V 2. ID = 35 A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes :※ 1. VGS = 0 V 2. ID = 250 µ A BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 11. Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature SFH054

Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms SFH054 Fig. 12. Gate Charge Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS EAS =L L IAS 2----2 1EAS =L L IAS 2----2 1----2 BVDSS -- VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D Charge VGS 10V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd Charge VGS 10V Qg Qgs Qgd 1mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) 10V VDS RL DUT Pulse Generator Vin VDS 10% 90% td(on) tr t on t off td(off) tf Vin VDS 10% 90% td(on) tr t on t off td(off) tf VDD ( 0.5 rated VDS ) V VDS RL DUT Pulse Generator RG

VGS • dv/dt controlled by RG

• IS controlled by pulse period VDD LL I SI S Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Dim. mm Inch A 15.77 16.03 0.621 0.631 B 20.80 21.10 0.819 0.831 C 20.05 20.31 0.789 0.800 D 4.48 4.58 0.176 0.180 E 4.27 4.37 0.168 0.172 F 5.32 5.58 0.209 0.220 G 4.90 5.16 0.193 0.203 H 1.90 2.06 0.075 0.081 I 2.35 2.45 0.093 0.096 J 0.6 0.024 K 1.2 1.33 0.047 0.052 L 1.07 1.33 0.042 0.052 M 2.99 3.25 0.118 0.128 φ 3.56 3.66 0.140 0.144 SFH054 1. Gate 2. Drain 3. Source A B C E I D φ G H L KJF M