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◆cRDS(ON) cMaxc1.2cohmcatcV GS c=c10Vc ◆cGatecChargec(cTypicalc29.0nC)c ◆cImprovecdv/dtccapability,cFastcswitchingc ◆c100%cavalanchecTestedc General Description Thisc MOSFETc isc producedc usingc advancedc planarc stripc DMOSc technology.c Thisc latestc technologyc hasc beenc especiallycdesignedctocminimizecon)statecresistancechavecac highcruggedcavalancheccharacteristics.cThesecdevicecarecwellc suitedcforchighcefficiencyc switchcmodecpowercsupplycactivec powercfactorccorrection.cElectronicclampcbasedconchalfcbridgec topology

c Symbolc Parameterc Ratings c Unitc RθJCc c ThermalcResistancecJunctionctocCasec c 0.82c ℃/W c RθCS c ThermalcResistancecCasectocSinkcTyp.c 0.5c ℃/W c RθJA c ThermalcResistancecJunctionctocAmbientc 62.5c ℃/W c c ElectricalcCharacteristicsc(cTCc=c25 ℃ Unlesscotherwisecnoted)c c Symbolc Itemsc Conditionsc Ratingsc Unitc Min c Typ. c Max c BV DSS c Drain)SourcecBreakdowncVoltagec V GS c=c0cV,cI Dc=c250uA 600 c c c Vc ΔBV DSSc /ΔTJc Breakdownc Voltagec Temperaturec coefficientc IDc=250uA,cReferencectoc25 ℃ c c 0.7 c c V/ ℃c IDSS c ZerocgatecvoltagecDraincCurrentc VDS c=c600V,cVGS c=c0Vc VDS c=c480V,cT Sc=c125 ℃c c c 10c uAc IGSSF c GatecbodycleakageccurrentcForwardc V GS c=c30V,cVDS c=c0Vc c c 100c nAc IGSSR c GatecbodycleakageccurrentcReversec V GS c=c)30V,cV DS c=c0Vc c c )100 c nAc c OncCharacteristicsc c VGS(th) c GatecThresholdcVoltagec VGS c=cV DS ,cI Dc=c250uA c 2.5c c 4.5 c Vc RDS(ON) c StaticcDrain)SourcecOn)Resistancec VGS c=c10V,cI Dc=c3.5A c c 0.98 c 1.2 c Ωc c DynamiccCharacteristicsc c Ciss c InputcCapacitancec VDS c=c25cV,cV GSc=c0Vc fc=c1.0MHz c 1000 c c pFc Coss c outputcCapacitancec c 110 c c pFc Crss ReversecTransfercCapacitancec c 12.6 c c pFc c c c c

SwitchingcCharacteristicsc c Symbolc Itemsc Conditionsc Min c Typ. c Max c Unitsc td(on) c Turn)oncDelaycTimec VDD c=c300V,cI Dc=c7.0Ac RGc=c25c Ωc (notec4,5) c c 20c c nsc trc Turn)oncRisecTimec c 50c c nsc td(off) Turn)offcDelaycTimec c 80c c nsc tfc Turn)offcFallcTimec c 70c c nsc Qgc TotalcGatecChargec VDS c=c480V,cIDc=c7.0Ac VGS c=c10Vc (notec4,5) c c 29c c nCc Qgs c Gate)SourcecChargec c 4.7 c c nCc Qgd c Gate)DraincChargec c 12.5 c c nCc c Drain)SourcecDiodecCharacteristicscc c ISc MaximumcContinuouscDrain)SourcecdiodecForwardcCurr ent c c 7.0 c Ac ISM c MaximumcPulsecDrain)SourcecdiodecForwardcCurrentc c c 28.0 c Ac VSD Drain)SourcecdiodecForwardcvoltagec V GS c=c0V,cI sc=c7.0Ac c c 1.4 c Vc trr c ReversecRecoverycTimec VGS c=c0V,cI sc=c7.0Ac dlF/dtc=100cA/usccccc(notec4)c c 350 c c nSc Qrr c ReversecRecoverycChargec c 3.3 c c uCc c c c c c c c Notesc 1.c RepetitivecRatingc:cPulsecwidthclimitedcbycmaximumcjunctionctemperaturec 2.c Lc=c10mH,cI AS c=c7.0A,cV DD c=c50V,cR Gc=c25cΩ,cstartingcT Jc=c25 ℃c 3.c ISD c≤c7.0A,cdi/dtc≤c200A/us,cV DD c≤cBV DSS c,cstartingcT Jc=c25 ℃c 4.c PulsecTestc:cPulsecwidthc≤c300us,cDutyccyclec≤c2%c 5.c Essentiallycindependentcofcoperationctemperturec c c

Fig.c1cOn)RegioncCharacteristicscccccccccccccccccFig.c2cOn)ResistancecvariationcvscDraincCurrentc cccccccccccccccccccccccccccccccccccccccccccccccccccAndcgatecVoltagec cccccccccc c Fig.c3cBreakdowncVoltagecVariationcvsccccccccccccccFigc4.cOn)ResistancecVariationcvscTemperaturec cccccTemperaturec cccccccc c Fig.c5cMaximumcSafecOperationcAreaccccccccccccccccFig.c6cMaximumcDraincCurrentcvscCasecTemp.c cccccccccc c 4/5c

c TO)220FcPackagecDimensionc c c c 5/5c