SFF7N60

SFF7N60 SEMIWELL | Alldatasheet

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■ RDS(on) (Max 1.2 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Copyright@Semiwell Semiconductor Inc., All rights reserved. Symbol 2. Drain 3. Source 1. Gate TO-220F 1 2 3 SemiWell Semiconductor

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.6 - V/°C IDSS Drain-Source Leakage Current VDS = 600V, VGS = 0V -- 1 0 u A VDS = 480V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 3.5A -1 . 0 1 . 2 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 1100 1500 pFCoss Output Capacitance - 110 150 Crss Reverse Transfer Capacitance - 12 16 Dynamic Characteristics td(on) Turn-on Delay Time VDD =300V, ID =7.0A, RG =25Ω (Note 4, 5) - 15 40 ns tr Rise Time - 30 70 td(off) Turn-off Delay Time - 110 230 tf Fall Time - 40 90 Qg Total Gate Charge VDS =480V, VGS =10V, ID =7.0A (Note 4, 5) - 28 37 nCQgs Gate-Source Charge - 5- Qgd Gate-Drain Charge(Miller Charge) - 11 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 . 0 AISM Pulsed Source Current - - 28 VSD Diode Forward Voltage I S =7.0A, VGS =0V - - 1.4 V trr Reverse Recovery Time IS=7.0A, VGS=0V, dIF/dt=100A/us -3 6 5 - n s Qrr Reverse Recovery Charge - 3.4 - uC SFF7N60 ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 15.7mH, IAS =7A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@Semiwell Semiconductor Inc., All rights reserved.

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 1EAS =L IAS 2----2 1----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th

(7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F