SDW80S600

SDW80S600 SEMIWELL | Alldatasheet

Document overview

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Technical content

Features

◆ Plastic material meets UL94V-0 ◆ Glass passivated chips ◆ Very short recovery time ◆ Extremely low switching loss ◆ Soft recovery behavior ◆ High ruggedness type General Description The SDW80S600 FRD has been designed for applications requiring low forward voltage drop and soft recovery charac- teristics. Typical applications are output rectification for SMPS, UPS, Welding and free wheeling in inverter, chopper and converter. IFAVM = 80A VRRM = 600V trr = 65ns TO- 247AD copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Absolute Maximum Ratings Thermal Characteristics

Electrical Characteristics

Symbol Parameter Min Typ Max Units IR Reverse Leakage Current VR = VRRM TC = 25 °C TC = 150 °C 0.1 14 mA VF Forward Voltage Drop IF = 80A TC = 25 °C IF = 80 A TC = 150 °C 1.5 1.3 1.8 1.5 V rt Forward Slope Resistance, Tj =150°C Threshold Voltage - -8 . 0 mΩ VF(TO) - -0 . 8 5V Symbol Parameter Min Typ Max Units trr Reverse Recovery Time ① IF = 40A , VR=30V ,di/dt = -50A/us ② IF = 1A , VR=30V ,di/dt = -50A/us 130 100 ns Irr Reverse Recovery Current IF = 40A , VR=30V ,di/dt = -50A/us Reverse Recovery Charge - -3 . 5A Qrr - -0 . 5 uC SDW80S600 Recovery Characteristics

TC=150 o C IRM, Reverse recovery current[A] di/dt, Rating of decreasing forward current[A/ us] IF=40A IF=20A IF=10A IF=1A 0 40 80 120 160 200 120 160 200 240 280 320 360 400 TC=150 o C Trr, Reverse recovery time[ns] di/dt, Rating of decreasing forward current[A/ us] IF=40AIF=20A IF=10A IF=1A 0 40 80 120 160 200 IF=40A IF=20A IF=10A IF=1A IRM, Reverse recovery current[A] di/dt, Rating of decreasing forward current[A/ us] TC=25 o C 0 40 80 120 160 200 100 200 300 400 500 600 TC=25 o C Qrr, Reverse recovery charge[nC] di/dt, Rating of decreasing forward current[A/ us] IF=40A IF=20A IF=10A IF=1A 0 40 80 120 160 200 400 800 1200 1600 2000 2400 2800 3200 3600 TC=150 o C Qrr, Reverse recovery charge[nC] di/dt, Rating of decreasing forward current[A/ us] IF=40A IF=20A IF=10A IF=1A 0 40 80 120 160 200 100 120 140 160 180 200 TC=25 o CTC=25 o C Trr, Reverse recovery time[ns] di/dt, Rating of decreasing forward current[A/ us] IF=40AIF=20A IF=10AIF=1A Fig 3. di/dt vs. reverse recovery time (TC=25oC) Fig 4. di/dt vs. reverse recovery time (TC=150oC) SDW80S600 Fig 1. di/dt vs. maximum reverse current (TC=25oC) Fig 2. di/dt vs. maximum reverse current (TC=150oC) Fig 5. di/dt vs. reverse recovery charge (TC=25oC) Fig 6. di/dt vs. reverse recovery charge (TC=150oC)

TC=150 o C TC=100 o C TC=50 o C IFAV, Forward current[A] VF, Forward voltage drop[V] TC=25 o C 300 0 100 200 300 400 500 600 700 800 IR, Leakage current[uA] VR, Reverse voltage[V] TC=150 o C TC=100 o C TC=50 o C TC=25 o C 0 20 40 60 80 100 120 140 100 150 200 250 300 350 180 o ΦΦ PD, Maximum Power Dissipation[W] IFAV, Forward current[A] Conduction Angle TJ=150 o C 0 2 04 06 08 0 100 110 120 130 140 150 ΦΦ TC, Maximum Allowable Case Temperature[ o IFAV, Forward current[A] Rthjc = 0.47 o C/W 180 o 0 2 04 06 08 0 1 0 0 120 130 140 150 160 170 180 190 CT, Junction Capacitance[pF] VR, Reverse voltage[V] Freuqency 1[MHz] SDW80S600 Fig 7. Forward average current vs. forward voltage drop Fig 8. Reverse leakage current vs. reverse voltage Fig 9. Juntion capacitance vs. reverse voltage. Fig 10. Maximum allowable case temperature Fig 11. Maximum power dissipation vs. forward average current

Dim. mm Inch A 15.77 16.03 0.621 0.631 B 20.80 21.10 0.819 0.831 C 20.05 20.31 0.789 0.800 D 4.48 4.58 0.176 0.180 E 4.27 4.37 0.168 0.172 F 10.64 11.16 0.418 0.440 G 4.90 5.16 0.193 0.203 H 1.90 2.06 0.075 0.081 I 2.35 2.45 0.093 0.096 J 0.6 0.024 K 1.93 2.13 0.076 0.084 L 1.07 1.33 0.042 0.052 Φ 3.56 3.66 0.140 0.144 SDW80S600 1. Cathode 2. Anode A B C E I D φ G H L KJF