SCN2C60 SEMIWELL | Alldatasheet
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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.5 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. 2. Gate 1. Cathode Symbol SemiWell Semiconductor Sensitive Gate Silicon Controlled Rectifiers TO-92 3. Anode Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C 200 VTM Peak On-State Voltage (1) ( ITM =3 A, Peak ) ─ 1.2 1.7 V IGT Gate Trigger Current (2) VAK = 6 V, RL=100 Ω TC = 25 °C TC = - 40 °C 200 500 VGT Gate Trigger Voltage (2) VD = 7 V, RL=100 Ω TC = 25 °C TC = - 40 °C 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage VGM = 0.67VDRM, Exponential waveform , RGK = 1000 Ω TJ = 125 °C 200 ── V/㎲ di/dt Critical Rate of Rise On-State Current ITM = 3A, Ig = 10mA 50 A/㎲ IH Holding Current VAK = 12 V, Gate Open TC = 25 °C TC = - 40 °C 5.0 mA Rth(j-c) Thermal Impedance Junction to case ── 50 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 160 °C/W SCN2C60 ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement.
-50 0 50 100 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VGT (t o VGT (25 o Junction Temperature [ o -50 0 50 100 150 0.0 0.4 0.8 1.2 1.6 2.0 IGT (t o IGT (25 o Junction Temperature [ o 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] VGD(0.2V) 25 ℃ IGM (1A) PG(AV) (0.1W) PGM (2W) VGM (5V) Gate Voltage [V] Gate Current [mA] 0.1 1 10 100 1000 10000 0.01 0.1 Transient Thermal Impedance [Normalized] Time (sec) 0.01 0.1 TJ = 25 o C TJ = 125 o C Instantaneous On-State Current [A] Instantaneous On-State Voltage [V] SCN2C60 Fig 1. Gate Characteristics Fi g 2. Maximum Case Temperature Fig 3. Typical Forward Voltage Fig 4. Thermal Response θ : Conduction Angle 360° θ 2ππ Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 θ = 30 o θ = 90 o θ = 60 o θ = 180 o θ = 120 o Max. Average Power Dissipation [W] Average On-State Current [A] -40 -20 0 20 40 60 80 100 120 Holding Current [mA] Junction Temperature [ ]℃ SCN2C60 Fig 8. Power DissipationFig 7. Typical Holding Current
Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 1. Cathode 2. Gate 3. Anode A B C G E F D SCN2C60 H J I