SCF12C60 SEMIWELL | Alldatasheet
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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC ) General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable fo r over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 3. Gate 1. Cathode Symbol SemiWell Semiconductor Silicon Controlled Rectifiers TO-220F 1 2 3 2. Anode Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM TC = 25 °C TC = 125 °C 200 VTM Peak On-State Voltage (1) ITM = 24 A tp=380㎲ ─ ─ 1.6 V IGT Gate Trigger Current (2) VAK = 6 V(DC), RL=10 Ω TC = 25 °C ── 15 mA VGT Gate Trigger Voltage (2) VD = 6 V(DC), RL=10 Ω TC = 25 °C ── 1.5 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C 200 ─ ─ V/㎲ IH Holding Current IT = 100mA, Gate Open TC = 25 °C ── 20 mA Rth(j-c) Thermal Impedance Junction to case ── 3.3 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 60 °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. SCF12C60
-50 0 50 100 150 0.1 IGT(t o IGT(25 o Junction Temperature[ o 0.01 0.1 Transient Thermal Impedance [ o C/W] Time (sec) 125 o C o C On-State Current [A] On-State Voltage [V] 0123456789 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] IGM(2A) VGD(0.2V) PG(AV)(0.5W) PGM(5W) VGM(5V) o C Gate Voltage [V] Gate Current [mA] Fig 2. Maximum Case T emperature θ : Conduction Angle 360° θ 2ππ Fig 3. Typical Forward Voltage Fig 4. Thermal Response Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature Fig 6. Typical Gate Trigger Current vs. Junction Temperature SCF12C60 Fig 1. Gate Characteristics -50 0 50 100 150 0.1 VGT(t o VGT(25 o Junction Temperature[ o
θ = 30 o θ = 60 o θ = 90 o θ = 120 o θ = 180 o Max. Average Power Dissipation [W] Average On-State Current [A] -50 0 50 100 150 0.1 IH(t o IH(25 o Junction Temperature[ o Fig 7. Typical Holding Current Fig 8. Power Dissipation SCF12C60
Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 . 5 4 0 . 1 0 0 K5 . 0 8 0 . 2 0 0 L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 SCF12C60 1. Cathode 2. Anode 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ