DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
◆ High voltage, high speed power switching ◆ Low VCE(sat) General Description This device is designed for high voltage, high speed switching characteristic required such as switching regulator, inverters, motor controls. 1 2 3 1/4Jun 2007. Rev. 0
Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 400 V Collector-Emitter Breakdown Voltage VCEO(SUS) IC=0.2A 400 V Collector Cut-off Current I CBO VCB=500V, IE=0 1 mA Emitter Cutoff Current I EBO VEB=7V, IC=0 1 mA DC Current Gain h FE VCE=5V, IC=6A 10 40 - Collector-Emitter Saturation Voltage VCE(SAT) IC=6A, IB=1.2A 1 V Base-Emitter Saturation Voltage VBE(SAT) IC=6A, IB=1.2A 1.5 V Storage Time t STG 1 4 ㎲ Fall Time t f VCC=5V, IC=0.5A (UI9600) 0.8 ㎲
F i g . 1 S t a t i c C h a r a c t e r i s t i c s F i g . 2 D C C u r r e n t G a i n Fig. 3 Saturation Voltage Fig. 4 Safe Operation Area Fig. 5 Power Derating 0 25 50 75 100 125 150 175 2000 100 VCE(V) Collector Emitter Voltage I C(A) Collector Current IC(A) Collector Current V CE(V) Collector Emitter Voltage TC(℃) Case Temperature IC(A) Collector Current hfe DC Current VBE(S) , VCE(S), Saturation Voltage IC(A) Collector Current PC(W) Power Dissipation
A(mm) 15.60±0.20 A1(mm) 13.60±0.20 A2(mm)dia. 9.60±0.20 B(mm) 19.90±0.20 B1(mm) 13.90±0.20 B2(mm) 12.76±0.20 B3(mm) 3.80±0.20 C(mm) 20.00±0.30 C1(mm) 3.50±0.20 C2(mm) 16.50±0.30 D(mm) 5.45(TYP) D1 2.0 ±0.20 D2 3.0±0.20 D3 1.00±0.20 E(mm) 4.80±0.20 +0.15 E1(mm) 1.50± -0.05 E2(mm) 1.40±0.20 F(mm) 18.70±0.20 +0.15 G(mm) 0.60 -0.05 φ(mm) 3.20±0.10