SBW13009 SEMIWELL | Alldatasheet

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Technical content

Features

  • Very High Switching Speed (Typical 40ns@8.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as switching mode power supply. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-247 SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A IC = 12A IB = 3.0A IC = 8.0A IB = 1.6A TC = 100 °C - - 0.5 1.0 1.5 2.0 V V BE(sat) Base-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A IC = 8.0A IB = 1.6A TC = 100 °C 1.2 1.6 1.5 V h FE DC Current Gain IC = 5.0A VCE = 5V IC = 8.0A VCE = 5V 6 - 30 ts tf Resistive Load Storage Time Fall Time IC = 8.0A VCC = 125V IB1 = 1.6A IB2 = - 1.6A TP = 25㎲ - 1.5 0.16 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 8.0A IB1= 1.6A VBE(off) = 5V LC = 0.2mH Vclamp = 300V - 0.6 0.04 2.0 0.1 ts tf Inductive Load Storage Time Fall Time V CC = 15V IC = 8.0A IB1= 1.6A VBE(off) = 5V LC = 0.2mH Vclamp = 300V TC = 100 °C - 0.8 0.05 2.5 0.15 SBW13009 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

TJ = 25 o C t, Time [ns] IC, Collector Current [A] 0123456789 1 0 1 1 1 2 1 3 1 4 TJ = 25 o C t, Time [us] IC, Collector Current [A] 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25 o C TJ = 125 o C VBE, Base-Emitter Voltage [V] IC, Collector Current [A] 0.1 1 10 0.01 0.1 TJ = 25 o C TJ = 125 o C VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] 0.01 0.1 1 10 TJ = 125 o C TJ = 25 o C hFE, DC Current Gain IC, Collector Current [A] 0123456789 1 0 IB = 200mA IB = 2000mA IB = 1600mA IB = 1200mA IB = 1000mA IB = 800mA IB = 600mA IB = 400mA IB = 0mA IC, Collector Current [A] VCE, Collector-Emitter Voltage [V] SBW13009 Fig 1. Static Characteristics Fig 2. DC Current Gain Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage Fig 5. Resistive Load Fall Time Fig 6. Resistive Load Storage Time ※ Note : hFE = 5 ※ Note : hFE = 5 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCE = 5V VCE = 1V

Power Derating Factor (%) TC, Case Temperature ( o 0 100 200 300 400 500 600 700 800 -3V -1.5V -5V VBE(off) IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 100 µs 10 µs 1ms DC IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] SBW13009 Fig 8. Reverse Biased Safe Operation Areas Fig 7. Safe Operation Areas Fig 9. Power Derating Curve ※Single Pulse ※ Notes : TC ≤ 100 °C Gain ≥ 4 LC = 0.5 mH

VBE(off) RBB IB IC VClamp VCC VCE D.U.T LC f IB1 VBE(off) RBB IB IC VCC VCE D.U.T RC SBW13009 Inductive Load Switching & RBSOA Test Circuit Resistive Load Switching Test Circuit

Dim. mm Inch A 15.77 16.03 0.621 0.631 B 20.80 21.10 0.819 0.831 C 20.05 20.31 0.789 0.800 D 4.48 4.58 0.176 0.180 E 4.27 4.37 0.168 0.172 F 5.32 5.58 0.209 0.220 G 4.90 5.16 0.193 0.203 H 1.90 2.06 0.075 0.081 I 2.35 2.45 0.093 0.096 J 0.6 0.024 K 1.2 1.33 0.047 0.052 L 1.07 1.33 0.042 0.052 M 2.99 3.25 0.118 0.128 φ 3.56 3.66 0.140 0.144 1. Base 2. Collector 3. Emitter A B C E I D φ G H L KJF M SBW13009