SBW13009-S

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Features

• Very High Switching Speed - Minimum Lot-to-Lot hFE Variation - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as light ing system, switch ing mode power supply. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-3P SemiWell Semiconductor 1 2 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A IC = 12.0A IB = 3.0A - - 0.5 0.6 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A -- 1.2 1.6 V hFE* DC Current Gain IC = 5.0A VCE = 5V IC = 8.0A VCE = 5V 5 - 40 ts tf Storage Time Fall Time IC = 8.0A VCC = 125V IB1 = 1.6A IB2 = -1.6A TP = 25㎲ - 3.0 0.7 SBW13009-S

Fig 1. Saturation voltage Fig 2. DC Current Gain Fig 3. Swiching Time Fig 4. Power Derating Fig 5. Safe operation area Fig 6. Collect output capacitance

A(mm) 15.60±0.20 A1(mm) 13.60±0.20 A2(mm)dia. 9.60±0.20 B(mm) 19.90±0.20 B1(mm) 13.90±0.20 B2(mm) 12.76±0.20 B3(mm) 3.80±0.20 C(mm) 20.00±0.30 C1(mm) 3.50±0.20 C2(mm) 16.50±0.30 D(mm) 5.45(TYP) D1 2.0 ±0.20 D2 3.0±0.20 D3 1.00±0.20 E(mm) 4.80±0.20 +0.15 E1(mm) 1.50± -0.05 E2(mm) 1.40±0.20 F(mm) 18.70±0.20 +0.15 G(mm) 0.60 -0.05 φ(mm) 3.20±0.10