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◆ Very High Switching Speed ◆ Minimum lot to lot h FE Variation ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Oct 2008. Rev. 0 1/4 Symbol
Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Symbol Items Conditions Ratings Unit Min Typ. Max ICEV Colletor Cut-off Current ( VBE = -1.5V ) VCE = 700V VCE = 700V TC = 100 ℃ 1.0 5.0 mA VCEO(SUS) Collector-Emitter Sustaining Voltage I B = 0, IC = 10mA 400 V VCE(sat) Collector-Emitter Sa turation Voltage IC = 1.0A, IB = 0.2A IC = 2.0A, IB = 0.5A IC = 4.0A, IB = 1.0A 0.5 0.6 1.0 mA VBE(sat) Base-Emitter Satu ration Voltage IC = 1.0A, IB = 0.2A IC = 2.0A, IB = 0.5A 1.2 1.6 mA hFE DC Current Gain IC = 1.0A, VCE = 5V IC = 2.0A, VCE = 5V V ts tf Storage Time Fall Time IC = 2.0A, VCC = 125V IB1 = 0.4A, IB2 = -0.4A TP = 25us 4.0 0.9
F i g . 1 D C C u r r e n t G a i n F i g . 2 S a t u r a t i o n V o l t a g e 0.01 0.1 1 1 0 100 VCE=5V 0.01 0.1 1 1 0.01 0.1 Ic=4I B VCE(sat) VBE(sat) Fig. 3 Power Derating Fig. 4 Safe Operation Area 0 25 50 75 100 125 150 175 2 0 100 1 10 100 10 0 0.01 0.1 500us 5msIcmax(DC) Icmax(pulse) Fig. 5 Collect output capacitance 0.1 1 10 100 10 0 100 1000 VBE(S), VCE(S) Saturation Voltage hFE, DC CURRENT GAIN IC[A], Collector Current IC[A], Collector Current PC[W], Power Dissipation TC[℃], Case Temperature IC[A], Collector Current VCE[V], Collector Emitter Voltage COB[pF], Capacitance VCB[V], Collector Base Voltage