SBP13007A SEMIWELL | Alldatasheet

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Features

  • Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as light ing system, switch ing mode power supply. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-220 SemiWell Semiconductor 1 2 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 8.0A IB = 2.0A IC = 5.0A IB = 1.0A TC = 100 °C - - 0.5 1.0 2.5 2.5 V V BE(sat) Base-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 5.0A IB = 1.0A TC = 100 °C 1.2 1.6 1.5 V h FE DC Current Gain IC = 2.0A VCE = 5V IC = 5.0A VCE = 5V ts tf Resistive Load Storage Time Fall Time IC = 5.0A VCC = 125V IB1 = 1.0A IB2 = - 1.0A TP = 25㎲ - 1.5 0.17 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 5.0A IB1 = 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V - 0.8 0.06 2.0 0.12 ts tf Inductive Load Storage Time Fall Time V CC = 15V IC = 5.0A IB1= 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V TC = 100 °C - 1.0 0.07 3.0 0.15 SBP13007A ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

0.1 1 10 0.01 0.1 TJ = 25 o C TJ = 125 o C VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25 o C TJ = 125 o C VBE, Base-Emitter Voltage [V] IC, Collector Current [A] 0123456789 1 0 IB = 0mA IB = 1400mA IB = 1200mA IB = 1000mA IB = 900mA IB = 800mA IB = 600mA IB = 400mA IB = 200mA IC, Collector Current [A] VCE, Collector-Emitter Voltage [V] 0123456789 TJ = 25 o C t, Time [us] IC, Collector Current [A] 0123456789 100 1000 TJ = 25 o C t, Time [ns] IC, Collector Current [A] 0.01 0.1 1 10 TJ = 125 o C TJ = 25 o C hFE, DC Current Gain IC, Collector Current [A] Fig 1. Static Characteristics Fig 2. DC Current Gain Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage Fig 5. Resistive Load Fall Time Fig 6. Resistive Load Storage Time ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCE = 5V VCE = 1V ※ Note : hFE = 5※ Note : hFE = 5 SBP13007A

0 100 200 300 400 500 600 700 800 -3V -1.5V -5V VBE(off) IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 100 µs 10 µs 1ms 500 µs DC IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 0 50 100 150 200 100 125 Power Derating Factor (%) TC, Case Temperature ( o SBP13007A Fig 8. Reverse Biased Safe Operation Areas Fig 7. Safe Operation Areas Fig 9. Power Derating Curve ※Single Pulse ※ Notes : TJ ≤ 100 °C IB1 = 2 A RBB = 0 Ω LC = 0.2mH

VBE(off) RBB IB IC VClamp VCC VCE D.U.T LC f IB1 VBE(off) RBB IB IC VCC VCE D.U.T RC SBP13007A Inductive Load Switching & RBSOA Test Circuit Resistive Load Switching Test Circuit

Dim. mm Inch A 10.01 10.31 0.394 0.406 B 2.59 2.89 0.102 0.114 C 12.06 12.46 0.475 0.491 D 13.4 13.8 0.528 0.543 E 3.56 3.96 0.14 0.156 F 2.54 0.1 G 4.98 5.18 0.196 0.204 H 3.16 3.3 0.124 0.13 I 1.17 1.37 0.046 0.054 J 2.52 2.82 0.099 0.111 K 0.31 0.53 0.012 0.021 L 1.17 1.37 0.046 0.054 M 0.71 0.91 0.028 0.036 φ 3.84 0.151 SBP13007A 1. Base 2. Collector 3. Emitter A B C I E J L φH G K M F D