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  • High Switching Speed - Short storge time - Wide Reverse Bias S.O.A General Description This devices is designed for high voltage, high speed switching characteristic,especially suitable for ballast sysytem. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-220 SemiWell Semiconductor 1 2 3

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 8.0A IB = 2.0A IC = 5.0A IB = 1.0A TC = 100 °C - - 0.6 1.5 3.0 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 5.0A IB = 1.0A TC = 100 °C 1.2 1.6 1.5 V h FE DC Current Gain IC = 2.0A VCE = 5V IC = 5.0A VCE = 5V ts ton Storage Time Turn on time IC = 5.0A VCC = 125V IB1 = 1.0A IB2 = - 1.0A TP = 25ɫ - 3.0 1.6 ɫ SBP13007-S œ Notes : Pulse Test : Pulse width † 300ɫ, Duty cycle † 2%

Fig 1. Saturation Voltage Fig 2. DC Current Gain Fig 3. Safe Operation Area Fig 4. Power Derating Fig 5. Resistive Load Fall Time

Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.42 1.62 0.056 0.064 N 0.45 0.6 0.018 0.024 O 1.17 1.37 0.046 0.054 ȃ 3.6 0.142 1. Base 2. Collector 3. Emitter A B C I G L M E F ȃH K N O J D C1.0 SBP13007-S