SBP13007-H1 SEMIWELL | Alldatasheet

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  • Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic,especially suitable for ballast system. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-220 SemiWell Semiconductor 1 2 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 8.0A IB = 2.0A IC = 5.0A IB = 1.0A TC = 100 °C - - 0.5 1.0 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 5.0A IB = 1.0A TC = 100 °C 1.2 1.6 1.5 V h FE DC Current Gain IC = 2.0A VCE = 5V IC = 5.0A VCE = 5V ts tf Resistive Load Storage Time Fall Time IC = 5.0A VCC = 125V IB1 = 1.0A IB2 = - 1.0A TP = 25㎲ - 1.3 0.17 2.5 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 5.0A IB1 = 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V - 0.6 0.06 1.8 0.12 ts tf Inductive Load Storage Time Fall Time V CC = 15V IC = 5.0A IB1= 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V TC = 100 °C - 0.8 0.07 2.5 0.15 SBP13007-H1 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

TJ = 25 o C t, Time [us] IC, Collector Current [A] 02468 1 0 100 1000 TJ = 25 o C t, Time [ns] IC, Collector Current [A] 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25 o C TJ = 125 o C VBE, Base-Emitter Voltage [V] IC, Collector Current [A] 0.1 1 10 0.01 0.1 TJ = 25 o C TJ = 125 o C VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] 0.01 0.1 1 10 TJ = 125 o C TJ = 25 o C hFE, DC Current Gain IC, Collector Current [A] 0123456789 1 0 IB = 200mA IB = 2000mA IB = 1600mA IB = 1200mA IB = 1000mA IB = 800mA IB = 600mA IB = 400mA IB = 0mA IC, Collector Current [A] VCE, Collector-Emitter Voltage [V] SBP13007-H1 Fig 1. Static Characteristics Fig 2. DC Current Gain Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage Fig 5. Resistive Load Fall Time Fig 6. Resistive Load Storage Time ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCE = 5V VCE = 1V ※ Note : hFE = 5 ※ Note : hFE = 5

0 100 200 300 400 500 600 700 800 -3V -1.5V -5V VBE(off) IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 100 µs 10 µs 1ms 500 µs DC IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 0 50 100 150 200 100 125 Power Derating Factor (%) TC, Case Temperature ( o SBP13007-H1 Fig 8. Reverse Biased Safe Operation Areas Fig 7. Safe Operation Areas Fig 9. Power Derating Curve ※Single Pulse ※ Notes : TJ ≤ 100 °C IB1 = 2 A RBB = 0 Ω LC = 0.2mH

VBE(off) RBB IB IC VClamp VCC VCE D.U.T LC f IB1 VBE(off) RBB IB IC VCC VCE D.U.T RC SBP13007-H1 Inductive Load Switching & RBSOA Test Circuit Resistive Load Switching Test Circuit

Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.25 1.55 0.049 0.061 N 0.45 0.6 0.018 0.024 O 0.6 1.0 0.024 0.039 φ 3.6 0.142 1. Base 2. Collector 3. Emitter A B C I G L M E F φH K N O J D C1.0 SBP13007-H1