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  • Very High Switching Speed - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A General Description This devices is designed for high voltage, high speed switching characteristic,especially suitable for ballast sysytem. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-220 SemiWell Semiconductor 1 2 3

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IB = 0.1A IC = 1.0A IB = 0.25A IC = 1.5A IB = 1.0A I TC = 100 °C - - 0.5 1.0 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A IB = 0.1A IC = 1.0A IB = 0.25A TC = 100 °C 1.0 1.2 V hFE DC Current Gain IC = 0.5A VCE = 2V IC = 1.0A VCE = 2V ts tf Storage Time Fall Time VCC = 5V IC = 0.5A - 24 0.8 SBP13003 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

Fig 1. Safe operation area Fig 2. DC Current Gain Fig 3. Power derating Fig 4. Saturation Voltage

Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.42 1.62 0.056 0.064 N 0.45 0.6 0.018 0.024 O 1.17 1.37 0.046 0.054 φ 3.6 0.142 1. Base 2. Collector 3. Emitter A B C I G L M E F φH K N O J D C1.0 SBP13003