SBN13003A SEMIWELL | Alldatasheet

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Features

  • Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 230mV@1.0A/0.25A) - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as lig hting system, swit ching regulator, inverter and deflection circuit. High Voltage Fast-Switching NPN Power Transistor 2.Collector 1.Emitter 3.Base Symbol SemiWell Semiconductor TO-92 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IB = 0.1A IC = 1.0A IB = 0.25A IC = 1.5A IB = 0.5A - - 0.3 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A IB = 0.1A 1.2 V hFE DC Current Gain IC = 0.5A VCE = 2V IC = 1.0A VCE = 2V 5 - ton ts tf Resistive Load Turn-On Time Storage Time Fall Time I C = 1.0A VCC = 125V IB1 = 0.2A IB2 = - 0.2A TP = 25㎲ - 0.25 1.32 0.23 1.0 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 1.0A IB1 = 0.2A IB2 = -0.5A L = 0.35mH Vclamp = 300V - 1.2 0.12 4.0 0.3 ts tf Inductive Load Storage Time Fall Time V CC = 15V IC = 1.0A IB1 = 0.2A IB2 = -0.5A L = 0.35mH Vclamp = 300V TC = 100 °C - 1.8 0.16 5.0 0.4 SBN13003A ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 IB = 250mA IB = 300mA IB = 400mA IB = 150mA IB = 100mA IB = 200mA IB = 50mA IB = 500mA IC, Collector Current [A] VCE, Collector-Emitter Voltage [V] 0.1 1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25 o C TJ = 125 o C VBE, Base-Emitter Voltage [V] IC, Collector Current [A] TJ = 25 o C tstg, Time [us] IC, Collector Current [A] 100 1000 TJ = 25 o C tf, Time [ns] IC, Collector Current [A] 0.1 1 0.01 0.1 TJ = 25 o C TJ = 125 o C VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] 0.01 0.1 1 TJ = 25 o C TJ = 125 o C hFE, DC Current Gain IC, Collector Current [A] SBN13003A Fig 1. Static Characteristics Fig 2. DC Current Gain Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage Fig 5. Resistive Load Fall Time Fig 6. Resistive Load Storage Time ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 ※ Notes : VCE = 5V VCE = 1V ※ Note : hFE = 5※ Note : hFE = 5

IC, Collector Current [A] VCE, Collector-Emitter Clamp Voltage [V] 0 50 100 150 200 100 125 Power Derating Factor (%) TC, Case Temperature ( o SBN13003A Fig 7. Safe Operation Areas Fig 9. Power Derating Curve ※Single Pulse

VBE(off) RBB IB IC VClamp VCC VCE D.U.T LC f IB1 VBE(off) RBB IB IC VCC VCE D.U.T RC SBN13003A Inductive Load Switching & RBSOA Test Circuit Resistive Load Switching Test Circuit

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 SBN13003A 1. Emitter 2. Collector 3. Base A B C G E F D H J I