SBN13001 SEMIWELL | Alldatasheet
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Technical content
Features
- Very High Switching Speed (Typical 120ns@100mA) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 120mV@100mA/20mA) - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as lig hting system, swit ching regulator, inverter and deflection circuit. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol TO-92 SemiWell Semiconductor 321 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 650V VCE = 650V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 1 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA IB = 10mA IC = 100mA IB = 20mA - - 0.3 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 50mA IB = 10mA -- 1V hFE DC Current Gain IC = 50mA VCE = 10V IC = 100mA VCE = 10V 10 - 30 ton ts tf Resistive Load Turn-On Time Storage Time Fall Time IC = 100mA VCC = 125V IB1 = 20mA IB2 = -20mA TP = 25㎲ - 0.2 1.5 0.15 1.0 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 100mA IB1 = 20mA IB2 = -50mA L = 0.35mH Vclamp = 300V - 2.0 0.12 4.0 0.3 ts tf Inductive Load Storage Time Fall Time V CC = 15V IC = 100mA IB1 = 20mA IB2 = -50mA L = 0.35mH Vclamp = 300V TC = 100 °C - 2.4 0.15 5.0 0.4 SBN13001 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
1E-3 0.01 0.1 TJ = 25 o C TJ = 125 o C hFE, DC Current Gain IC, Collector Current [A] 0.01 0.1 0.01 0.1 TJ=25 o C TJ=125 o C VCE,Collector-Emitter Voltage[V] IC,Collector Current[A] 0.01 0.1 0.5 0.6 0.7 0.8 0.9 1.0 TJ=125 o C TJ=25 o C VBE,Base-Emitter Voltage[V] IC,Collector Current[A] DC IC,Collector Current[A] VCE,Collector-Emitter Clamp Voltage[V] 012345 0.0 0.1 0.2 0.3 0.4 0.5 IB=0mA IB=10mA IB=20mA IB=30mA IB=40mA IB=50mA IB=60mA IB=70mA IC,Collector Current[A] VCE,Collector-Emitter Voltage[V] SBN13001 Fig 1. Static Characteristics Fig 2. DC Current Gain Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage Fig 5. Safe Operation Areas Fig 6. Power Derating Curve ※ Notes : VCE = 5V 0 50 100 150 200 100 125 Power Derating Factor(%) TC,Case Temperature( o ※ Notes : hFE = 5 ※ Notes : VCE = 5V ※ Notes : hFE = 5
VBE(off) RBB IB IC VClamp VCC VCE D.U.T LC f IB1 VBE(off) RBB IB IC VCC VCE D.U.T RC SBN13001 Inductive Load Switching & RBSOA Test Circuit Resistive Load Switching Test Circuit